Lateral diodes in stacked transistor technologies
US-12598814-B2 · Apr 7, 2026 · US
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Kar Ayan patents
Kar Ayan is listed as an inventor on 57 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Kar Ayan |
| Total patents | 57 |
| First publication | Apr 2, 2020 |
| Latest publication | Apr 7, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Substrate-less lateral diode integrated circuit structures
US-12507475-B2 · Dec 23, 2025 · US
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-12402349-B2 · Aug 26, 2025 · US
Substrate-less silicon controlled rectifier (scr) integrated circuit structures
US-2025261452-A1 · Aug 14, 2025 · US
Substrate-free integrated circuit structures
US-2025254993-A1 · Aug 7, 2025 · US
Integrated circuit structures including backside vias
US-2025228012-A1 · Jul 10, 2025 · US
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures
US-12328947-B2 · Jun 10, 2025 · US
ESD protection decoupled from diffusion
US-12328946-B2 · Jun 10, 2025 · US
Substrate-free integrated circuit structures
US-12317590-B2 · May 27, 2025 · US
Integrated circuit structures including backside vias
US-12294003-B2 · May 6, 2025 · US
Recent patents
Latest publications not already listed above.
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-12288789-B2 · Apr 29, 2025 · US
Two-terminal integrated circuit device for electrostatic discharge protection
US-2024413147-A1 · Dec 12, 2024 · US
Linear ratiometric metal resistor-based temperature sensor with remote sensing support
US-2024393186-A1 · Nov 28, 2024 · US
ESD diode solution for nanoribbon architectures
US-11996403-B2 · May 28, 2024 · US
Backside contacted sub-fin diodes
US-2024170581-A1 · May 23, 2024 · US
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-2024145471-A1 · May 2, 2024 · US
FinFET varactor quality factor improvement
US-11961836-B2 · Apr 16, 2024 · US
Diodes with backside contact
US-2024088131-A1 · Mar 14, 2024 · US
Transistor devices with extended drain
US-2024088136-A1 · Mar 14, 2024 · US
Targeted sub-fin etch depth
US-2024088134-A1 · Mar 14, 2024 · US
Wide channel diode structure including sub-fin
US-2024088132-A1 · Mar 14, 2024 · US
Transistor devices with integrated diodes
US-2024088133-A1 · Mar 14, 2024 · US
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact
US-11908856-B2 · Feb 20, 2024 · US
Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact
US-2024055497-A1 · Feb 15, 2024 · US
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-2024038889-A1 · Feb 1, 2024 · US
Gate-all-around integrated circuit structures including varactors
US-11869987-B2 · Jan 9, 2024 · US
Varactor device with backside electrical contact
US-2023420578-A1 · Dec 28, 2023 · US
Integrated circuit structures including backside vias
US-2023402449-A1 · Dec 14, 2023 · US
Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact
US-11837641-B2 · Dec 5, 2023 · US
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact
US-11824116-B2 · Nov 21, 2023 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 57 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/121 | 34 |
| H10D89/611 | 25 |
| H10D30/6735 | 23 |
| H10D30/6757 | 22 |
| H10D30/43 | 22 |