Carbon hardmask opening using boron nitride mask
US-12564022-B2 · Feb 24, 2026 · US
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Fu Qian patents
Fu Qian is listed as an inventor on 107 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Fu Qian |
| Total patents | 107 |
| First publication | Apr 30, 2015 |
| Latest publication | Feb 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Systems and methods for reverse pulsing
US-2026011531-A1 · Jan 8, 2026 · US
Dry etching with etch byproduct self-cleaning
US-2026011569-A1 · Jan 8, 2026 · US
Etching silicon-containing material and silicon-and-germanium-containing material
US-2025357132-A1 · Nov 20, 2025 · US
Dry etching with etch byproduct self-cleaning
US-12469715-B2 · Nov 11, 2025 · US
Method for etching high aspect ratio structures
US-12463053-B2 · Nov 4, 2025 · US
Method for etching ruthenium
US-2025323058-A1 · Oct 16, 2025 · US
Systems and methods for reverse pulsing
US-12437966-B2 · Oct 7, 2025 · US
Cryogenic etching of silicon-containing materials
US-2025246435-A1 · Jul 31, 2025 · US
Sidewall passivation for plasma etching
US-12334354-B2 · Jun 17, 2025 · US
Recent patents
Latest publications not already listed above.
Enhanced etch selectivity using halides
US-12315733-B2 · May 27, 2025 · US
Methods of etching silicon-and-oxygen-containing features at low temperatures
US-2025069895-A1 · Feb 27, 2025 · US
Plasma etching in semiconductor processing
US-2025062131-A1 · Feb 20, 2025 · US
Methods of etching carbon-containing features at low temperatures
US-2025054768-A1 · Feb 13, 2025 · US
Methods of etching oxygen-containing features at low temperatures
US-2025054770-A1 · Feb 13, 2025 · US
Carbon gap fill processes
US-12198928-B2 · Jan 14, 2025 · US
Selective carbon deposition on top and bottom surfaces of semiconductor substrates
US-2024420948-A1 · Dec 19, 2024 · US
Methods and systems for advanced ion control for etching processes
US-12165872-B2 · Dec 10, 2024 · US
Halogen-free etching of silicon nitride
US-2024404837-A1 · Dec 5, 2024 · US
Selection gate separation for 3D NAND
US-12148475-B2 · Nov 19, 2024 · US
Selective carbon deposition on top and bottom surfaces of semiconductor substrates
US-12125699-B2 · Oct 22, 2024 · US
Method for etching high aspect ratio structures
US-2024332031-A1 · Oct 3, 2024 · US
Selective silicon deposition
US-12106972-B2 · Oct 1, 2024 · US
Enhanced etch selectivity using halides
US-2024266180-A1 · Aug 8, 2024 · US
Dry etch of boron-containing material
US-2024249953-A1 · Jul 25, 2024 · US
Photolithography enhancement techniques
US-2024242970-A1 · Jul 18, 2024 · US
Pulsed etch process
US-12009218-B2 · Jun 11, 2024 · US
Dry etching with etch byproduct self-cleaning
US-2024128091-A1 · Apr 18, 2024 · US
Boron nitride for mask patterning
US-11935751-B2 · Mar 19, 2024 · US
Carbon mold for dram capacitor
US-2024038833-A1 · Feb 1, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Lam Res Corp | 72 |
| Applied Materials Inc | 35 |
| Jain Amit | 1 |
| Fu Qian | 1 |
| Lee Wonchul | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P50/242 | 69 |
| H01L21/3065 | 59 |
| H10P50/283 | 58 |
| H10P50/73 | 52 |
| H10P72/0421 | 44 |