Boron nitride for mask patterning

Patent metadata

Field	Value
Publication number	US-11935751-B2
Application number	US-202117330013-A
Country	US
Kind code	B2
Filing date	May 25, 2021
Priority date	May 25, 2021
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

First claim

The invention claimed is:

1. A deposition method comprising:
delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber;
providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor is greater than or about 2:1;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a boron-and-nitrogen material that is free of silicon on a substrate disposed within the processing region of the semiconductor processing chamber.

2. The deposition method of claim 1 , wherein the boron-and-nitrogen material is characterized by a film density of greater than or about 1.6 g/cm 3 .

3. The deposition method of claim 1 , wherein a plasma power is maintained at less than or about 1000 W during the forming the plasma of all precursors within the processing region of the semiconductor processing chamber.

4. The deposition method of claim 1 , wherein a substrate temperature is maintained above or about 300° C. during the depositing the boron-and-nitrogen material on the substrate.

5. The deposition method of claim 1 , wherein a pressure is maintained below or about 10 Torr during the depositing the boron-and-nitrogen material on the substrate.

6. The deposition method of claim 1 , further comprising:
providing an argon precursor with the boron-containing precursor and the nitrogen-containing precursor.

7. The deposition method of claim 1 , wherein the as-deposited boron-and-nitrogen material is characterized by an absolute film stress of less than or about 500 MPa.

8. The deposition method of claim 1 , wherein the boron-containing precursor comprises diborane, and wherein the nitrogen-containing precursor comprises ammonia.

9. The deposition method of claim 1 , wherein the substrate comprises a carbon-containing film formed overlying a stack of alternating films.

10. A deposition method comprising:
delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a boron-and-nitrogen material on a substrate comprising a carbon-containing material, wherein the substrate is disposed within the processing region of the semiconductor processing chamber, wherein the boron-and-nitrogen material comprises a boron-rich material, and wherein a density of the boron-and-nitrogen material is characterized by a film density of greater than or about 1.6 g/cm 3 .

11. The deposition method of claim 10 , further comprising:
providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor is greater than or about 2:1.

12. The deposition method of claim 11 , further comprising:
providing an argon precursor with the boron-containing precursor and the nitrogen-containing precursor, wherein a flow rate ratio of the argon precursor to the hydrogen-containing precursor is greater than or about 1:1.

13. The deposition method of claim 10 , wherein the as-deposited boron-and-nitrogen material is characterized by an absolute film stress of less than or about 500 MPa.

14. The deposition method of claim 10 , wherein a substrate temperature is maintained above or about 300° C. during the depositing the boron-and-nitrogen material on the substrate.

15. The deposition method of claim 10 , wherein a plasma power is maintained at less than or about 500 W during the forming the plasma of all precursors within the processing region of the semiconductor processing chamber.

16. The deposition method of claim 10 , wherein the boron-containing precursor comprises diborane, and wherein the nitrogen-containing precursor comprises ammonia.

17. A deposition method comprising:
delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber, wherein a plasma power is maintained at less than or about 500 W during the forming the plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the substrate comprises a carbon-containing film formed overlying a stack of alternating films, and wherein the boron-and-nitrogen material is deposited in contact with the carbon-containing film.

18. The deposition method of claim 17 , further comprising:
providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor is greater than or about 2:1.

19. The deposition method of claim 17 , wherein the as-deposited boron-and-nitrogen material is characterized by an absolute film stress of less than or about 500 MPa, and wherein a density of the boron-and-nitrogen material is characterized by a film density of greater than or about 1.6 g/cm 3 .

20. The deposition method of claim 17 , wherein a substrate temperature is maintained above or about 400° C. during the depositing the boron-and-nitrogen material on the substrate.

Assignees

• Applied Materials Inc

Inventors

• Zhu Siyu
• Yang Chuanxi
• Yu Hang
• Padhi Deenesh
• Kwak Yeonju
• Kim Jeong Hwan
• Fu Qian
• Yang Xiawan

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title