Methods of etching oxygen-containing features at low temperatures

Patent metadata

Field	Value
Publication number	US-2025054770-A1
Application number	US-202318232991-A
Country	US
Kind code	A1
Filing date	Aug 11, 2023
Priority date	Aug 11, 2023
Publication date	Feb 13, 2025
Grant date	—

Abstract

Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.

First claim

1 . A semiconductor processing method comprising:
providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is housed in the processing region, and wherein a layer of oxygen-containing material is disposed on the substrate; forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor; and contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor, wherein the contacting etches a feature in the layer of oxygen-containing material, and wherein a semiconductor processing chamber operating temperature is maintained at less than or about 0° C. during the semiconductor processing method.

2 . The semiconductor processing method of claim 1 , wherein the fluorine-containing precursor comprises nitrogen trifluoride (NF 3 ), carbon tetrafluoride (CF 4 ), hexafluorobutadiene (C 4 F 6 ), or difluoromethane (CH 2 F 2 ).

3 . The semiconductor processing method of claim 1 , wherein the carbon-containing precursor further comprises hydrogen.

4 . The semiconductor processing method of claim 1 , wherein the carbon-containing precursor comprises methane (CH 4 ) or difluoromethane (CH 2 F 2 ).

5 . The semiconductor processing method of claim 1 , further comprising:
providing an oxygen-containing precursor to the processing region with the fluorine-containing precursor and the carbon-containing precursor.

6 . The semiconductor processing method of claim 5 , wherein the oxygen-containing precursor comprises diatomic oxygen (O 2 ).

7 . The semiconductor processing method of claim 1 , wherein the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor are formed at a plasma power of less than or about 750 W.

8 . The semiconductor processing method of claim 1 , further comprising:
applying a bias power while contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor.

9 . The semiconductor processing method of claim 8 , wherein the bias power is less than or about 1,000 W.

10 . The semiconductor processing method of claim 1 , wherein the feature in the layer of oxygen-containing material is characterized by a critical dimension of less than or about 20 nm.

11 . The semiconductor processing method of claim 1 , wherein the semiconductor processing chamber operating temperature is less than or about −40° C.

12 . The semiconductor processing method of claim 1 , wherein the contacting etches the feature in the layer of oxygen-containing material at an etch rate of greater than or about 400 Å/min.

13 . A semiconductor processing method comprising:
providing etchant precursors to a processing region of a semiconductor processing chamber, wherein a substrate is housed in the processing region, wherein a layer of oxygen-containing material is disposed on the substrate, wherein the etchant precursors comprise a fluorine-containing precursor and a carbon-and-hydrogen-containing precursor, and wherein a flow rate of hydrogen (H) relative to a flow rate of fluorine (F) in a total flow rate of the etchant precursors is greater than or about 0.3:1; forming plasma effluents of the etchant precursors; and contacting the substrate with the plasma effluents of the etchant precursors, wherein the contacting etches a feature in the layer of oxygen-containing material.

14 . The semiconductor processing method of claim 13 , wherein the fluorine-containing precursor further comprises carbon.

15 . The semiconductor processing method of claim 13 , further comprising:
forming a layer of carbon-containing passivation on sidewalls of the feature.

16 . The semiconductor processing method of claim 13 , wherein the contacting selectively etches the layer of oxygen-containing material relative to a mask material on the layer of oxygen-containing material at a selectivity of greater than or about 0.3:1.

17 . The semiconductor processing method of claim 13 , wherein a semiconductor processing chamber operating temperature is between about −100° C. about 0° C.

18 . A semiconductor processing method comprising:
providing etchant precursors to a processing region of a semiconductor processing chamber, wherein a substrate is housed in the processing region, wherein a layer of oxygen-containing material is disposed on the substrate, wherein the etchant precursors comprise at least one fluorine-containing precursor and a carbon-and-hydrogen-containing precursor, and wherein a flow rate of hydrogen (H) relative to a flow rate of fluorine (F) in a total flow rate of the etchant precursors is greater than or about 0.3:1; forming plasma effluents of the etchant precursors; and contacting the substrate with the plasma effluents of the etchant precursors, wherein the contacting etches a feature in the layer of oxygen-containing material, and wherein a semiconductor processing chamber operating temperature is maintained at less than or about 0° C. during the semiconductor processing method.

19 . The semiconductor processing method of claim 18 , wherein the etchant precursors comprise one or more of nitrogen trifluoride (NF 3 ), carbon tetrafluoride (CF 4 ), hexafluorobutadiene (C 4 F 6 ), fluoroform (CHF 3 ), difluoromethane (CH 2 F 2 ), and methyl fluoride (CH 3 F).

20 . The semiconductor processing method of claim 18 , further comprising:
providing an oxygen-containing precursor to the processing region with the fluorine-containing precursor and the carbon-and-hydrogen-containing precursor, wherein the oxygen-containing precursor comprises diatomic oxygen (O 2 ).

Assignees

• Applied Materials Inc

Inventors

• Li Jiajing
• Lyu Mengjie
• Li Menghui
• Yang Xiawan
• Joubert Olivier P
• Shinohara Susumu
• Fu Qian

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H01L21/31116 Primary

  Electricity · mapped topic