Use of noble metals in the formation of conductive connectors
US-11094587-B2 · Aug 17, 2021 · US
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Bergstrom Daniel B patents
Bergstrom Daniel B is listed as an inventor on 27 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Bergstrom Daniel B |
| Total patents | 27 |
| First publication | Jul 28, 2015 |
| Latest publication | Aug 17, 2021 |
Notable patents
Publications ranked by popularity score, then publication date.
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
US-11063151-B2 · Jul 13, 2021 · US
Metallization in integrated circuit structures
US-11018222-B1 · May 25, 2021 · US
Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction
US-10804460-B2 · Oct 13, 2020 · US
Technologies for selectively etching oxide and nitride materials and products formed using the same
US-10777421-B2 · Sep 15, 2020 · US
Diffusion barriers
US-10651082-B2 · May 12, 2020 · US
Microelectronic devices and methods for enhancing interconnect reliability performance using tungsten containing adhesion layers to enable cobalt interconnects
US-2020066645-A1 · Feb 27, 2020 · US
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
US-2019393336-A1 · Dec 26, 2019 · US
Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction
US-2019140166-A1 · May 9, 2019 · US
Diffusion barriers
US-2019088538-A1 · Mar 21, 2019 · US
Recent patents
Latest publications not already listed above.
Thermal budget enhancement of a magnetic tunnel junction
US-2018322994-A1 · Nov 8, 2018 · US
Direct plasma densification process and semiconductor devices
US-10096513-B2 · Oct 9, 2018 · US
Tungsten gates for non-planar transistors
US-10020375-B2 · Jul 10, 2018 · US
Tungsten gates for non-planar transistors
US-2018047825-A1 · Feb 15, 2018 · US
Technologies for selectively etching oxide and nitride materials and products formed using the same
US-2018005841-A1 · Jan 4, 2018 · US
Tungsten gates for non-planar transistors
US-9812546-B2 · Nov 7, 2017 · US
Direct plasma densification process and semiconductor devices
US-2017278748-A1 · Sep 28, 2017 · US
Direct plasma densification process and semiconductor devices
US-9711399-B2 · Jul 18, 2017 · US
Tungsten gates for non-planar transistors
US-9637810-B2 · May 2, 2017 · US
Tungsten gates for non-planar transistors
US-2017117378-A1 · Apr 27, 2017 · US
Tungsten gates for non-planar transistors
US-9580776-B2 · Feb 28, 2017 · US
Technologies for selectively etching oxide and nitride materials and products formed using the same
US-2017004975-A1 · Jan 5, 2017 · US
Direct plasma densification process and semiconductor devices
US-2016307797-A1 · Oct 20, 2016 · US
Tungsten gates for non-planar transistors
US-2016035725-A1 · Feb 4, 2016 · US
Tungsten gates for non-planar transistors
US-2016035724-A1 · Feb 4, 2016 · US
Tungsten gates for non-planar transistors
US-9177867-B2 · Nov 3, 2015 · US
Additives to improve the performance of a precursor source for cobalt deposition
US-9090964-B2 · Jul 28, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 27 |
| Bergstrom Daniel B | 4 |
| Rahman Md Tofizur | 2 |
| Wiegand Christopher J | 2 |
| Maertz Brian | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/024 | 15 |
| H10D84/038 | 14 |
| H10D30/62 | 14 |
| H10D64/01318 | 12 |
| H10D64/691 | 12 |