Diffusion barriers

Patent metadata

Field	Value
Publication number	US-10651082-B2
Application number	US-201616081713-A
Country	US
Kind code	B2
Filing date	Mar 31, 2016
Priority date	Mar 31, 2016
Publication date	May 12, 2020
Grant date	May 12, 2020

Abstract

In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

First claim

The invention claimed is:

1. A semiconductor device, the semiconductor device comprising a chemical compound that includes a transition metal, a post-transition metal, a metalloid, and a non-metal, wherein the compound is tungsten-aluminum-silicon-carbon- nitride (WAISiCN) or tantalum-aluminum-silicon-carbon-nitride (TaAlSiCN).

2. The semiconductor device of claim 1 , wherein the chemical compound further includes a second transition metal.

3. The semiconductor device of claim 2 , wherein the second transition metal is ruthenium.

4. The semiconductor device of claim 2 , wherein the second transition metal is selected from the group consisting of ruthenium, palladium, platinum, osmium, rhodium, and iridium.

5. The semiconductor device of claim 1 ,
wherein the chemical compound is included within an integrated circuit that includes a plurality of computational units, and an interconnect network configured to communicatively couple the computational units,
wherein the interconnect network comprises a plurality of interfaces, including a trench, the trench having a barrier material and;
a conductive material, and
wherein the barrier material includes the chemical compound.

6. The semiconductor device of claim 1 , further comprising an interconnect network, the interconnect network including at least one interconnect structure that includes a barrier material and a conductive material, where the barrier material includes the chemical compound.

7. The semiconductor device of claim 6 , wherein the conductive material includes one or more of copper, silver, cobalt, nickel, tungsten, ruthenium, aluminum, tantalum, and titanium.

8. The semiconductor device of claim 6 , further comprising a plurality of transistors, where the interconnect network is configured to communicatively couple at least some of the transistors.

9. The semiconductor device of claim 1 , where the semiconductor device is an integrated circuit that includes at least one trench or via having a barrier material, and where the barrier material includes the chemical compound.

10. The semiconductor device of claim 9 , wherein the at least one trench or via further includes a conductive material.

11. A semiconductor device, the semiconductor device comprising a chemical compound, wherein the compound includes tantalum-ruthenium-aluminum-carbon-nitride (TaRuAICN), tungsten-ruthenium-aluminum-carbon-nitride (WRuAICN), tantalum-ruthenium-boron-carbon-nitride (TaRuBCN), or tungsten-ruthenium-boron-carbon-nitride (WRuBCN).

12. The semiconductor device of claim 11 , further comprising an interconnect network, the interconnect network including at least one interconnect structure that includes a barrier material and a conductive material, where the barrier material includes the chemical compound.

13. The semiconductor device of claim 12 , wherein the conductive material includes one or more of copper, silver, cobalt, nickel, tungsten, ruthenium, aluminum, tantalum, and titanium.

14. The semiconductor device of claim 12 , further comprising a plurality of transistors, where the interconnect network is configured to communicatively couple at least some of the transistors.

15. The semiconductor device of claim 11 , where the semiconductor device is an integrated circuit that includes at least one trench or via having a barrier material, and where the barrier material includes the chemical compound.

16. The semiconductor device of claim 15 , wherein the at least one trench or via further includes a conductive material.

17. A semiconductor device, the semiconductor device comprising a chemical compound, wherein the compound includes a transition metal, a post-transition metal, a metalloid, and a nonmetal, wherein the compound is zirconium-ruthenium-silicon-carbon-nitride (ZrRuSiCN) or zirconium-silicon-carbon-nitride (ZrSiCN).

18. The semiconductor device of claim 17 , further comprising an interconnect network, the interconnect network including at least one interconnect structure that includes a barrier material and a conductive material, where the barrier material includes the chemical compound.

19. The semiconductor device of claim 18 , wherein the conductive material includes one or more of copper, silver, cobalt, nickel, tungsten, ruthenium, aluminum, tantalum, and titanium.

20. The semiconductor device of claim 1 , further comprising a plurality of transistors, where the interconnect network is configured to communicatively couple at least some of the transistors.

21. The semiconductor device of claim 17 , where the semiconductor device is an integrated circuit that includes at least one trench or via having a barrier material, and where the barrier material includes the chemical compound.

22. The semiconductor device of claim 21 , wherein the at least one trench or via further includes a conductive material.

23. A process of manufacturing an integrated circuit, the process comprising:
depositing a dielectric;
forming, in the dielectric, an opening for an interconnect;
depositing, in the opening, a barrier material, the barrier material comprising a chemical compound, wherein the chemical compound includes one or more of tungsten-aluminum-silicon-carbon-nitride (WAISiCN), tantalum-aluminum-silicon-carbon-nitride (TaAlSiCN), tantalum-ruthenium-aluminum-carbon-nitride (TaRuAICN), tungsten-ruthenium-aluminum-carbon-nitride (WRuAICN), tantalum-ruthenium-boron-carbon-nitride (TaRuBCN), tungsten-ruthenium-boron-carbon-nitride (WRuBCN), zirconium-ruthenium-silicon-carbon-nitride(ZrRuSiCN), and zirconium-silicon-carbon-nitride (ZrSiCN); and
depositing, in the opening with the barrier material, a conductive material.

24. The process of claim 23 , wherein forming the opening includes performing an etch to form the opening.

25. The process of claim 23 , wherein the conductive material includes one or more of copper, silver, cobalt, nickel, tungsten, ruthenium, aluminum, tantalum, and titanium.

Assignees

• Intel Corp

Inventors

• Zierath Daniel J
• Farmer Jason A
• Bergstrom Daniel B

Classifications

• C23C16/45529

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title

• C23C16/45531

  specially adapted for making ternary or higher compositions · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• H01L21/76846 Primary

  Electricity · mapped topic

• H01L21/28562

  Electricity · mapped topic