Semiconductor device and method for fabricating the same
US-9799769-B2 · Oct 24, 2017 · US
by physical means only
by physical means only · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P50/262 |
| Official title | {by physical means only} |
| Display label | by physical means only |
| Total patents | 219 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 22 |
| 2016 | 23 |
| 2017 | 25 |
| 2018 | 18 |
| 2019 | 17 |
| 2020 | 25 |
| 2021 | 25 |
| 2022 | 18 |
| 2023 | 15 |
| 2024 | 16 |
| 2025 | 13 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Gas injection system with precursor for planar deprocessing of semiconductor devices using a focused ion beam
US-9761467-B2 · Sep 12, 2017 · US
Semiconductor device and method of manufacturing semiconductor device
US-2017250257-A1 · Aug 31, 2017 · US
Replacement metal gate transistor
US-9728623-B2 · Aug 8, 2017 · US
High-k / metal gate CMOS transistors with TiN gates
US-9721847-B2 · Aug 1, 2017 · US
Self-aligned source and drain regions for semiconductor devices
US-2017213736-A1 · Jul 27, 2017 · US
Method for the manufacture of metal structures and an electronic component with at least one metal structure
US-2017194257-A1 · Jul 6, 2017 · US
Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby
US-9685606-B2 · Jun 20, 2017 · US
Semiconductor device and method for fabricating the same
US-2017125579-A1 · May 4, 2017 · US
Device manufacturing method and device
US-9627259-B2 · Apr 18, 2017 · US
Forming interlayer dielectric material by spin-on metal oxide deposition
US-2017103949-A1 · Apr 13, 2017 · US
Device manufacturing method
US-2017076982-A1 · Mar 16, 2017 · US
Semiconductor device and method for fabricating the same
US-9583600-B1 · Feb 28, 2017 · US
Method to etch copper barrier film
US-9570320-B2 · Feb 14, 2017 · US
Interconnects based on subtractive etching of silver
US-9564362-B2 · Feb 7, 2017 · US
Method of reducing residual contamination in singulated semiconductor die
US-2016372323-A1 · Dec 22, 2016 · US
Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch
US-2016365283-A1 · Dec 15, 2016 · US
Self-aligned source and drain regions for semiconductor devices
US-2016336424-A1 · Nov 17, 2016 · US
Self-aligned source and drain regions for semiconductor devices
US-2016336418-A1 · Nov 17, 2016 · US
Selective sputtering for pattern transfer
US-9493879-B2 · Nov 15, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P50/262?
- CPC H10P50/262 is the Cooperative Patent Classification code for “by physical means only.”
- How many patents are filed under CPC H10P50/262 (by physical means only)?
- Our database includes 219 publications tagged with this CPC code.
- Is patent activity under CPC H10P50/262 growing?
- Publication counts under this code: 16 in 2024 vs 13 in 2025 (latest complete years).