Replacement metal gate transistor

Patent metadata

Field	Value
Publication number	US-9728623-B2
Application number	US-201313921731-A
Country	US
Kind code	B2
Filing date	Jun 19, 2013
Priority date	Jun 19, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A replacement metal gate transistor is described. Various examples provide a replacement metal gate transistor including a trench, a first sidewall and a second sidewall. A layer is disposed in the trench where the layer has a bottom section disposed on a bottom of the trench and sidewall sections disposed on the first and second sidewalls, wherein the sidewall sections of the layer are at least 50% thinner than the bottom section of the layer.

First claim

The invention claimed is:

1. A replacement metal gate transistor comprising:
a trench having a bottom, a first sidewall and a second sidewall;
a dielectric layer disposed in the trench, the dielectric layer having a bottom section disposed on the bottom of the trench and sidewall sections disposed on the first and second sidewalls, the bottom section having a top surface defining a plane;
a metal layer disposed in the trench, the metal layer having a bottom section disposed on the bottom section of the dielectric layer and sidewall sections disposed on the sidewall sections of the dielectric layer, wherein the sidewall sections of the metal layer extend partially up the sidewall sections of the dielectric layer such that at least a portion of the sidewall sections of the dielectric layer extend a perpendicular distance from the plane that is further from the plane than a farthest perpendicular distance from the plane to which any portion of the metal layer extends; and
a contact layer disposed on, and in direct contact with each of, the bottom section of the metal layer, the sidewall sections of the metal layer, and portions of the sidewall sections of the dielectric layer that are not covered by the metal layer.

2. The replacement metal gate transistor of claim 1 , wherein the metal layer comprises first and second metal layers formed of different metals.

3. The replacement metal gate transistor of claim 2 , wherein the sidewall sections of the second metal layer are at least 50% thinner than the bottom section of the second metal layer.

4. The replacement metal gate transistor of claim 3 , wherein the bottom section of the second metal layer is at least 2 nanometers thick and the sidewalls sections of the second metal layer are less than or equal to 1 nanometer thick.

5. The replacement metal gate transistor of claim 1 , wherein the sidewall sections of the metal layer are at least 50% thinner than the bottom section of the metal layer.

6. The replacement metal gate transistor of claim 5 , wherein the bottom section of the metal layer is at least 2 nanometers thick and the sidewalls sections of the metal layer are less than or equal to 1 nanometer thick.

7. The replacement metal gate transistor of claim 1 , wherein the dielectric layer is formed from a material selected from the group consisting of hafnium silicate, zirconium silicate, hafnium dioxide, or zirconium dioxide.

8. The replacement metal gate transistor of claim 1 , wherein the metal layer is formed from a material including titanium nitride.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Zhang Ying
• Sherman Steven

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/282

  of inorganic materials · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/262

  by physical means only · CPC title