Device manufacturing method and device

Patent metadata

Field	Value
Publication number	US-9627259-B2
Application number	US-201514928482-A
Country	US
Kind code	B2
Filing date	Oct 30, 2015
Priority date	Nov 14, 2014
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench.

First claim

What is claimed is:

1. A device manufacturing method comprising:
forming a film on a substrate having a first surface and a second surface, the film being formed on the second surface side of the substrate, the substrate having a device region on the first surface side;
forming a trench in part of the substrate from the first surface side of the substrate, while leaving the film to remain; and
removing the film at a portion on the second surface side of the trench by injecting a substance onto the film from the second surface side of the substrate, a part of the film being remained on the substrate after the removing.

2. The method according to claim 1 , wherein the film is one of a metal film and a resin film.

3. The method according to claim 1 , wherein the substance is particles containing carbon dioxide.

4. The method according to claim 1 , wherein, when the trench is formed, the film is exposed.

5. The method according to claim 1 , wherein the substrate is a semiconductor substrate.

6. The method according to claim 1 , wherein, when the film is removed, an angle of inclination of an edge of the film along the trench to the second surface is smaller than an angle of inclination of a side surface of the trench to the second surface.

7. The method according to claim 1 , wherein the trench is formed by plasma etching.

8. The method according to claim 1 , wherein the trench is formed by blade dicing.

9. The method according to claim 1 , wherein, before the film is formed, the second surface side of the substrate is removed to make the substrate thinner.

10. The method according to claim 1 , wherein, after the trench is formed, a resin sheet is bonded to the first surface side before the film is removed, and the substance is injected when the film is removed, with the resin sheet being covered with a mask.

11. A device manufacturing method comprising:
forming a trench in part of a substrate having a first surface and a second surface, the trench being formed from the first surface side of the substrate;
removing the second surface side of the substrate while leaving the substrate to remain at a portion of the second surface side of the trench;
forming a film on the second surface side; and
injecting a substance onto the film from the second surface side, to remove the film at a portion on the second surface side of the trench and the substrate at the portion on the second surface side of the trench, and to expose the trench.

12. The method according to claim 11 , wherein the film is one of a metal film and a resin film.

13. The method according to claim 11 , wherein the substance is particles containing carbon dioxide.

14. A device manufacturing method comprising:
forming a film on a substrate having a first surface and a second surface, the film being formed on the second surface side of the substrate, the substrate having a device region on the first surface side;
forming a trench in part of the substrate from the first surface side, while leaving the film to remain; and
injecting a substance from the first surface side, to remove the film at a portion on the second surface side of the trench, a part of the film being remained on the substrate after the injecting.

15. The method according to claim 14 , wherein the film is one of a metal film and a resin film.

16. The method according to claim 14 , wherein the substance is particles containing carbon dioxide.

17. The method according to claim 14 , wherein, when the trench is formed, the film is exposed.

Assignees

• Toshiba Kk

Inventors

• Takano Masamune

Classifications

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P70/30

  Cleaning after the substrates have been singulated · CPC title