Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
US-2024047583-A1 · Feb 8, 2024 · US
characterised by the semiconductor materials
characterised by the semiconductor materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P30/202 |
| Official title | {characterised by the semiconductor materials} |
| Display label | characterised by the semiconductor materials |
| Total patents | 242 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 26 |
| 2016 | 30 |
| 2017 | 36 |
| 2018 | 22 |
| 2019 | 17 |
| 2020 | 16 |
| 2021 | 19 |
| 2022 | 25 |
| 2023 | 11 |
| 2024 | 19 |
| 2025 | 20 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Leakage-free implantation-free etsoi transistors
US-2017317171-A1 · Nov 2, 2017 · US
Semiconductor device, manufacturing method thereof, and electronic device
US-2017288064-A1 · Oct 5, 2017 · US
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
US-2017213918-A1 · Jul 27, 2017 · US
Semiconductor device and manufacturing method thereof
US-9530852-B2 · Dec 27, 2016 · US
Semiconductor device, manufacturing method thereof, and electronic device
US-2016372606-A1 · Dec 22, 2016 · US
Semiconductor device and driving method thereof
US-9525051-B2 · Dec 20, 2016 · US
Manufacturing method of semiconductor device
US-2016343733-A1 · Nov 24, 2016 · US
Method for manufacturing semiconductor device
US-9496375-B2 · Nov 15, 2016 · US
Methods of manufacturing semiconductor devices
US-2016314970-A1 · Oct 27, 2016 · US
Semiconductor device and method for manufacturing the same
US-2016293767-A1 · Oct 6, 2016 · US
Method for manufacturing semiconductor device
US-2016284823-A1 · Sep 29, 2016 · US
Method for manufacturing semiconductor device
US-9450080-B2 · Sep 20, 2016 · US
Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration
US-9437428-B2 · Sep 6, 2016 · US
Method for mode control in multimode semiconductor waveguide lasers
US-2016254649-A1 · Sep 1, 2016 · US
Metal oxide thin film transistor with source and drain regions doped at room temperature
US-2016233338-A1 · Aug 11, 2016 · US
Thin film transistor array panel and manufacturing method thereof
US-2016204266-A1 · Jul 14, 2016 · US
Semiconductor device and method for manufacturing the same
US-9378980-B2 · Jun 28, 2016 · US
Semiconductor device and method of manufacture thereof
US-9373648-B2 · Jun 21, 2016 · US
Method for mode control in multimode semiconductor waveguide lasers
US-9368935-B2 · Jun 14, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P30/202?
- CPC H10P30/202 is the Cooperative Patent Classification code for “characterised by the semiconductor materials.”
- How many patents are filed under CPC H10P30/202 (characterised by the semiconductor materials)?
- Our database includes 242 publications tagged with this CPC code.
- Is patent activity under CPC H10P30/202 growing?
- Publication counts under this code: 19 in 2024 vs 20 in 2025 (latest complete years).