Method for mode control in multimode semiconductor waveguide lasers

Patent metadata

Field	Value
Publication number	US-2016254649-A1
Application number	US-201615151538-A
Country	US
Kind code	A1
Filing date	May 11, 2016
Priority date	Apr 28, 2008
Publication date	Sep 1, 2016
Grant date	—

Abstract

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

First claim

1 . A method, comprising:
depositing, for patterning current injection, a layer of SiN on a surface of a wide stripe semiconductor waveguide; patterning vias in the layer of SiN where current injection is desired; and covering the layer of SiN and the surface of the wide stripe semiconductor waveguide with ohmic metal.

2 . The method according to claim 1 , wherein current spreading is about 10 μm and wherein predetermined areas of the wide stripe semiconductor waveguide are deprived of current injection.

3 . A method, comprising:
etching, for patterning current injection, through a p+ cap layer of a wide stripe semiconductor waveguide to reduce current spreading; depositing a nitride on the p+ cap layer; and etching vias in the nitride for current injection in predetermined areas.

4 . The method according to claim 3 , wherein, when etching is used to avoid lateral current spreading, an etch depth having a tolerance of +/−10 nm.

5 . The method according to claim 3 , wherein etch depth is a function of a size of mask opening.

6 . A method, comprising:
using, for patterning current injection, ion implant isolation where current injection is to be avoided; and covering surface of the wide stripe semiconductor waveguide with ohmic metal.

7 . The method according to claim 6 , wherein ion implant isolation is limited by a line size of photoresist.

8 . The method according to claim 6 , wherein a minimum feature size is limited by lateral excursion of the implant beyond a photoresist boundary.

9 . The method according to claim 6 , wherein the ion implants is spatially distributed to effect a controlled spatial variation of the effective electrical current density.

Assignees

• Northrop Grumman Systems Corp

Inventors

• Rice Robert R
• Kunkee Elizabeth T

Classifications

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10W20/095

  by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096) · CPC title

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/1053

  Comprising an active region having a varying composition or cross-section in a specific direction · CPC title