Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9496375-B2
Application number	US-201514831972-A
Country	US
Kind code	B2
Filing date	Aug 21, 2015
Priority date	Feb 7, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over an oxide insulating film;
forming a film over the oxide semiconductor film;
adding oxygen to the film;
forming a gate electrode over the film;
forming an first insulating film comprising an aluminum oxide over the oxide semiconductor film, the film added the oxygen, and the gate electrode;
etching the first insulating film to form a sidewall in contact with side surfaces of the gate electrode and to expose portions of the oxide semiconductor film; and
forming a second insulating film comprising silicon nitride over the gate electrode, the sidewall, and the exposed oxide semiconductor film.

2. The method for manufacturing the semiconductor device, according to claim 1 ,
wherein the film is metal film, and
wherein a material of the metal film is one of aluminum, gallium, hafnium, and yttrium.

3. The method for manufacturing the semiconductor device, according to claim 1 ,
wherein the film is a first oxide insulating film and a metal film over the first oxide insulating film, and
wherein a material of the metal film is one of aluminum, gallium, hafnium, and yttrium.

4. The method for manufacturing the semiconductor device, according to claim 1 , wherein oxygen is added to the oxide semiconductor film when the step of adding oxygen to the film is performed.

5. The method for manufacturing the semiconductor device, according to claim 1 , wherein the step of adding oxygen to the film is performed by one of an ion implantation method, an ion doping method, a plasma immersion ion implantation method, and plasma treatment.

6. The method for manufacturing the semiconductor device, according to claim 1 , wherein the oxide semiconductor film comprises one or more elements selected from In, Ga, Sn, and Zn.

7. The method for manufacturing the semiconductor device, according to claim 1 , further comprising the steps of:
forming a transistor over a semiconductor substrate;
forming a planarization insulating film over the transistor;
forming a first wiring electrically connected to the transistor through an opening in the planarization insulating film;
forming the oxide insulating film over the planarization insulating film and the first wiring; and
electrically connecting the first wiring to the oxide semiconductor film by a second wiring.

8. The method for manufacturing the semiconductor device, according to claim 1 , wherein the semiconductor device is a central processing unit, a microprocessor, a random access memory, a converter, a power transistor, a thyristor, an image sensor, an electro-optical device, or a light-emitting display device.

9. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over an oxide insulating film;
forming a film over the oxide semiconductor film;
adding oxygen to the film;
forming a gate electrode over the film;
adding dopants to the oxide semiconductor film with use of the gate electrode as a mask to form low-resistance regions in the oxide semiconductor film;
forming an first insulating film comprising an aluminum oxide over the oxide semiconductor film, the film added the oxygen, and the gate electrode;
etching the first insulating film to form a sidewall in contact with side surfaces of the gate electrode and to expose portions of the oxide semiconductor film; and
forming a second insulating film comprising silicon nitride over the gate electrode, the sidewall, and the exposed oxide semiconductor film.

10. The method for manufacturing the semiconductor device, according to claim 9 ,
wherein the film is metal film, and
wherein a material of the metal film is one of aluminum, gallium, hafnium, and yttrium.

11. The method for manufacturing the semiconductor device, according to claim 9 ,
wherein the film is a first oxide insulating film and a metal film over the first oxide insulating film, and
wherein a material of the metal film is one of aluminum, gallium, hafnium, and yttrium.

12. The method for manufacturing the semiconductor device, according to claim 9 , wherein oxygen is added to the oxide semiconductor film when the step of adding oxygen to the film is performed.

13. The method for manufacturing the semiconductor device, according to claim 9 , wherein the step of adding oxygen to the film is performed by one of an ion implantation method, an ion doping method, a plasma immersion ion implantation method, and plasma treatment.

14. The method for manufacturing the semiconductor device, according to claim 9 , wherein the oxide semiconductor film comprises one or more elements selected from In, Ga, Sn, and Zn.

15. The method for manufacturing the semiconductor device, according to claim 9 , further comprising the steps of:
forming a transistor over a semiconductor substrate;
forming a planarization insulating film over the transistor;
forming a first wiring electrically connected to the transistor through an opening in the planarization insulating film;
forming the oxide insulating film over the planarization insulating film and the first wiring; and
electrically connecting the first wiring to the oxide semiconductor film by a second wiring.

16. The method for manufacturing the semiconductor device, according to claim 9 , wherein the semiconductor device is a central processing unit, a microprocessor, a random access memory, a converter, a power transistor, a thyristor, an image sensor, an electro-optical device, or a light-emitting display device.

17. The method for manufacturing the semiconductor device, according to claim 9 , wherein the dopants are at least one of helium, neon, argon, krypton, and xenon.

18. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over an oxide insulating film;
forming a film over the oxide semiconductor film;
adding oxygen to the film;
etching the film to expose portions of the oxide semiconductor film;
forming a gate electrode over the film; and
forming an insulating film over the gate electrode and the exposed oxide semiconductor film,
wherein the insulating film is in contact with the exposed oxide semiconductor film.

19. The method for manufacturing the semiconductor device, according to claim 18 ,
wherein the film is metal film, and
wherein a material of the metal film is one of aluminum, gallium, hafnium, and yttrium.

20. The method for manufacturing the semiconductor device, according to claim 18 ,
wherein the film is a first oxide insulating film and a metal film over the first oxide insulating film, and
wherein a material of the metal film is one of aluminum, gallium, hafnium, and yttrium.

21. The method for manufacturing the semiconductor device, according to claim 18 , wherein oxygen is added to the oxide semiconductor film when the step of adding oxygen to the film is performed.

22. The method for manufacturing the semiconductor device, according to claim 18 , wherein the step of adding oxygen to the film is performed by one of an ion implantation method, an ion doping method, a plasma immersion ion implantation method, and plasma treatment.

23. The method for manufacturing the semiconductor device, according to claim 18 , wherein the oxide semiconductor film comprises one or more elements selected from In, Ga, Sn, and Zn.

24. The method for manufa

Assignees

• Semiconductor Energy Lab

Inventors

• Isobe Atsuo
• Hosoya Kunio

Classifications

• H10P50/282

  of inorganic materials · CPC title

• H10P32/17

  characterised by the semiconductor material · CPC title

• H10P32/12

  between a solid phase and a gaseous phase · CPC title

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title