Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration

Patent metadata

Field	Value
Publication number	US-9437428-B2
Application number	US-201414552064-A
Country	US
Kind code	B2
Filing date	Nov 24, 2014
Priority date	Nov 29, 2013
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of: forming an oxide semiconductor film over a first insulating film; performing a first heat treatment in a vacuum atmosphere where oxygen in the oxide semiconductor film is released; performing a second heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity after the first heat treatment, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20 atoms/cm 3 .

2. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the first heat treatment is performed at a temperature higher than or equal to 350° C. and lower than or equal to 800° C., and
wherein the first heat treatment is performed in the vacuum atmosphere with a pressure greater than or equal to 1×10 −7 Pa and less than or equal to 10 Pa.

3. The method for manufacturing a semiconductor device according to claim 1 ,
wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10 −3 Ωcm and less than 1×10 4 Ωcm.

4. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°.

5. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film having conductivity includes at least one of an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).

6. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the semiconductor device includes a resistor, and
wherein the resistor includes the oxide semiconductor film having conductivity.

7. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the semiconductor device includes a capacitor, and
wherein the capacitor includes the oxide semiconductor film having conductivity.

8. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor film over a first insulating film; adding a rare gas to the oxide semiconductor film by a doping method or an ion implantation method; performing a heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20 atoms/cm 3 .

9. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the rare gas is at least one of helium, neon, argon, krypton, and xenon.

10. The method for manufacturing a semiconductor device according to claim 8 ,
wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10 −3 Ωcm and less than 1×10 4 Ωcm.

11. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°.

12. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the oxide semiconductor film having conductivity includes at least one of an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).

13. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the semiconductor device includes a resistor, and
wherein the resistor includes the oxide semiconductor film having conductivity.

14. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the semiconductor device includes a capacitor, and
wherein the capacitor includes the oxide semiconductor film having conductivity.

Assignees

• Semiconductor Energy Lab

Inventors

• Oota Masashi
• Ishihara Noritaka
• Nakashima Motoki
• Kurosawa Yoichi
• Yamazaki Shunpei
• Hosaka Yasuharu
• Obonai Toshimitsu
• Koezuka Junichi

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/2922 Primary

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title