Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9378980-B2
Application number	US-201514964898-A
Country	US
Kind code	B2
Filing date	Dec 10, 2015
Priority date	Dec 18, 2009
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode layer over the gate insulating layer; and
forming a channel formation region, a source region, and a drain region in the oxide semiconductor layer by introducing elements into the oxide semiconductor layer for selectively forming oxygen defects in the source region and the drain region,
wherein a concentration of the elements of the source region or the drain region is higher than that of the channel formation region, and
wherein the elements are one or more selected from the group consisting of titanium, tungsten, and molybdenum.

2. The method for manufacturing a semiconductor device, according to claim 1 , further comprising the steps of:
forming an insulating layer over the gate electrode layer; and
forming a source electrode layer and a drain electrode layer over the insulating layer.

3. The method for manufacturing a semiconductor device, according to claim 1 , wherein the channel formation region includes the elements in the step of introducing the elements.

4. The method for manufacturing a semiconductor device, according to claim 1 , wherein the elements are introduced by an ion implantation method.

5. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode layer over the gate insulating layer;
forming an insulating layer over the gate electrode layer; and
forming a first region functioning as a source and drain regions, a second region having higher resistance than the first region, and a channel formation region by introducing elements into the oxide semiconductor layer for selectively forming oxygen defects in the first region and the second region;
wherein a concentration of the elements of the first region is higher than that of the channel formation region, and
wherein the elements are one or more selected from the group consisting of titanium, tungsten, and molybdenum.

6. The method for manufacturing a semiconductor device, according to claim 5 , further comprising the step of:
forming a source electrode layer and a drain electrode layer over the insulating layer.

7. The method for manufacturing a semiconductor device, according to claim 5 , wherein the channel formation region includes the elements in the step of introducing the elements.

8. The method for manufacturing a semiconductor device, according to claim 5 , wherein the elements are introduced by an ion implantation method.

9. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode layer over the gate insulating layer;
introducing first elements into a first part of the oxide semiconductor layer by using the gate electrode layer as a mask;
forming an insulating layer over the gate electrode layer;
introducing second elements into a second part of the oxide semiconductor layer by using the gate electrode layer and a part of the insulating layer as a mask;
wherein a first region functioning as source and drain regions, a second region having higher resistance than the first region, and a channel formation region are formed by the steps of introducing the first elements and the second elements,
wherein the second region is between the first region and the channel formation region,
wherein a concentration of the sum of the first elements and the second elements of the first region is higher than that of the channel formation region, and
wherein the first elements and the second elements are one or more selected from the group consisting of titanium, tungsten, and molybdenum.

10. The method for manufacturing a semiconductor device, according to claim 9 , further comprising the step of:
forming a source electrode layer and a drain electrode layer over the insulating layer.

11. The method for manufacturing a semiconductor device, according to claim 9 , wherein the channel formation region includes the first elements in the step of introducing the first elements.

12. The method for manufacturing a semiconductor device, according to claim 9 , wherein the first elements and the second elements are introduced by an ion implantation method.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koezuka Junichi

Classifications

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P30/22

  using masks · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title