Manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-2016343733-A1
Application number	US-201615226008-A
Country	US
Kind code	A1
Filing date	Aug 2, 2016
Priority date	Nov 29, 2013
Publication date	Nov 24, 2016
Grant date	—

Abstract

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

First claim

What is claimed is:

1 . A method for manufacturing an oxide semiconductor film having conductivity, comprising the steps of:
forming an oxide semiconductor film over a substrate; applying a first heat treatment to the oxide semiconductor film to make the oxide semiconductor film including defects; exposing a surface of the oxide semiconductor film to a solution containing boron, phosphorus, an alkali metal, or an alkaline earth metal; and applying a second heat treatment to the oxide semiconductor film to form the oxide semiconductor film having conductivity after the first heat treatment.

2 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 1 , wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20 atoms/cm 3 .

3 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 1 , wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10 −3 Ω·cm and less than 1×10 4 Ω·cm.

4 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 1 , wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°.

5 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 1 , wherein the oxide semiconductor film having conductivity includes at least one of an In—Ga oxide, an In—Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).

6 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 1 , further comprising forming a resistor, the resistor comprising the oxide semiconductor film having conductivity.

7 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 1 , further comprising forming a capacitor, the capacitor comprising the oxide semiconductor film having conductivity as an electrode.

8 . A method for manufacturing an oxide semiconductor film having conductivity, comprising the steps of:
forming an oxide semiconductor film over a substrate; adding a rare gas to the oxide semiconductor film by a doping method or an ion implantation method; exposing a surface of the oxide semiconductor film to a solution containing boron, phosphorus, an alkali metal, or an alkaline earth metal; applying a heat treatment to the oxide semiconductor film to form the oxide semiconductor film having conductivity after the first heat treatment.

9 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20 atoms/cm 3 .

10 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , wherein the rare gas is at least one of helium, neon, argon, krypton, and xenon.

11 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10 −3 Ω·cm and less than 1×10 4 Ω·cm.

12 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°.

13 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , wherein the oxide semiconductor film having conductivity includes at least one of an In—Ga oxide, an In—Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).

14 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , further comprising forming a resistor, the resistor comprising the oxide semiconductor film having conductivity.

15 . The method for manufacturing an oxide semiconductor film having conductivity according to claim 8 , further comprising forming a capacitor, the capacitor comprising the oxide semiconductor film having conductivity as an electrode.

Assignees

• Semiconductor Energy Lab

Inventors

• Oota Masashi
• Ishihara Noritaka
• Nakashima Motoki
• Kurosawa Yoichi
• Yamazaki Shunpei
• Hosaka Yasuharu
• Obonai Toshimitsu
• Koezuka Junichi

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/2922 Primary

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title