Electroluminescent display device
US-10510302-B2 · Dec 17, 2019 · US
the IGFET comprising multiple separately-addressable gate electrodes
the IGFET comprising multiple separately-addressable gate electrodes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10K10/482 |
| Official title | {the IGFET comprising multiple separately-addressable gate electrodes} |
| Display label | the IGFET comprising multiple separately-addressable gate electrodes |
| Total patents | 141 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 11 |
| 2016 | 8 |
| 2017 | 16 |
| 2018 | 17 |
| 2019 | 15 |
| 2020 | 15 |
| 2021 | 11 |
| 2022 | 16 |
| 2023 | 10 |
| 2024 | 15 |
| 2025 | 6 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Organic light-emitting diode display device
US-2019378886-A1 · Dec 12, 2019 · US
Electrolyte-gated transistors for detection of molecules
US-10481126-B2 · Nov 19, 2019 · US
Liquid crystal display device
US-2019346728-A1 · Nov 14, 2019 · US
Display device including display element and transistor
US-10475869-B2 · Nov 12, 2019 · US
Logic circuitry using three dimensionally stacked dual-gate thin-film transistors
US-10403759-B2 · Sep 3, 2019 · US
Display device having LTPS and oxide TFTs integrated on the same substrate
US-10312312-B2 · Jun 4, 2019 · US
Field effect transistor and method for manufacturing the same, and display device
US-10230001-B2 · Mar 12, 2019 · US
Synaptic transistor based on metal nano-sheet and method of manufacturing the same
US-10147897-B2 · Dec 4, 2018 · US
Strain gated transistors and method
US-2018315852-A1 · Nov 1, 2018 · US
Logic circuitry using three dimensionally stacked dual-gate thin-film transistors
US-2018254351-A1 · Sep 6, 2018 · US
Array substrate and method for manufacturing the same
US-2018211984-A1 · Jul 26, 2018 · US
Structure for transistor switching speed improvement utilizing polar elastomers
US-10026911-B2 · Jul 17, 2018 · US
Circuit layout for thin film transistors in series or parallel
US-10020457-B2 · Jul 10, 2018 · US
Electroluminescent display device
US-2018182302-A1 · Jun 28, 2018 · US
Organic light emitting display panel and organic light emitting display device including the same
US-2018151827-A1 · May 31, 2018 · US
Complementary thin film transistor and manufacturing method thereof
US-9966415-B2 · May 8, 2018 · US
Thin Film Transistor Sensor and Manufacturing Method Thereof
US-2018114931-A1 · Apr 26, 2018 · US
Electronic device and manufacturing method thereof
US-9954171-B2 · Apr 24, 2018 · US
Complementary thin film transistor and manufacturing method thereof
US-2018097035-A1 · Apr 5, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10K10/482?
- CPC H10K10/482 is the Cooperative Patent Classification code for “the IGFET comprising multiple separately-addressable gate electrodes.”
- How many patents are filed under CPC H10K10/482 (the IGFET comprising multiple separately-addressable gate electrodes)?
- Our database includes 141 publications tagged with this CPC code.
- Is patent activity under CPC H10K10/482 growing?
- Publication counts under this code: 15 in 2024 vs 6 in 2025 (latest complete years).