Array structure of single-ploy nonvolatile memory
US-9530460-B2 · Dec 27, 2016 · US
LDMOS having built-in components
LDMOS having built-in components · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/151 |
| Official title | {LDMOS having built-in components} |
| Display label | LDMOS having built-in components |
| Total patents | 304 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 48 |
| 2016 | 37 |
| 2017 | 37 |
| 2018 | 28 |
| 2019 | 17 |
| 2020 | 29 |
| 2021 | 16 |
| 2022 | 30 |
| 2023 | 25 |
| 2024 | 18 |
| 2025 | 16 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
US-9461104-B2 · Oct 4, 2016 · US
Transistor arrangement
US-9406659-B2 · Aug 2, 2016 · US
Semiconductor device
US-9397090-B1 · Jul 19, 2016 · US
High-voltage metal-insulator-semiconductor field effect transistor structures
US-9356014-B2 · May 31, 2016 · US
Semiconductor device and fabrication method thereof
US-2016141415-A1 · May 19, 2016 · US
Antifuse OTP memory cell with performance improvement, and manufacturing method and operating method of memory
US-9324381-B2 · Apr 26, 2016 · US
Semiconductor device and method for fabricating the same
US-9318601-B2 · Apr 19, 2016 · US
Semiconductor device
US-9306002-B2 · Apr 5, 2016 · US
Semiconductor device
US-9276094-B2 · Mar 1, 2016 · US
High voltage multiple channel LDMOS
US-9245998-B2 · Jan 26, 2016 · US
High voltage laterally diffused metal oxide semiconductor
US-9236449-B2 · Jan 12, 2016 · US
Forming jfet and ldmos transistor in monolithic power integrated circuit using deep diffusion regions
US-2015380398-A1 · Dec 31, 2015 · US
Semiconductor device and method for fabricating the same
US-2015357466-A1 · Dec 10, 2015 · US
Ldmos device and structure for bulk finfet technology
US-2015357462-A1 · Dec 10, 2015 · US
Semiconductor device
US-9209169-B1 · Dec 8, 2015 · US
Semiconductor device and power circuit including a sense transistor for current sensing
US-2015341029-A1 · Nov 26, 2015 · US
Semiconductor device and method of manufacturing semiconductor device
US-9196722-B2 · Nov 24, 2015 · US
High voltage semiconductor devices with Schottky diodes
US-9196723-B1 · Nov 24, 2015 · US
Semiconductor device employing trenches for active gate and isolation
US-9190408-B2 · Nov 17, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/151?
- CPC H10D84/151 is the Cooperative Patent Classification code for “LDMOS having built-in components.”
- How many patents are filed under CPC H10D84/151 (LDMOS having built-in components)?
- Our database includes 304 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/151 growing?
- Publication counts under this code: 18 in 2024 vs 16 in 2025 (latest complete years).