Iii-nitride tunnel junction with modified p-n interface
US-2018374699-A1 · Dec 27, 2018 · US
Tunnel-effect diodes
Tunnel-effect diodes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D8/70 |
| Official title | Tunnel-effect diodes |
| Display label | Tunnel-effect diodes |
| Total patents | 183 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 17 |
| 2016 | 17 |
| 2017 | 23 |
| 2018 | 15 |
| 2019 | 17 |
| 2020 | 21 |
| 2021 | 24 |
| 2022 | 16 |
| 2023 | 13 |
| 2024 | 10 |
| 2025 | 8 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device including two-dimensional material
US-9991371-B2 · Jun 5, 2018 · US
Stacked semiconductor structure
US-2018145188-A1 · May 24, 2018 · US
Methods for using remote plasma chemical vapor deposition (rp-cvd) and sputtering deposition to grow layers in light emitting devices
US-2017338369-A1 · Nov 23, 2017 · US
MIM/RRAM structure with improved capacitance and reduced leakage current
US-9825117-B2 · Nov 21, 2017 · US
Selector for RRAM
US-9786795-B2 · Oct 10, 2017 · US
Graphene nanoribbon electronic device and method of manufacturing thereof
US-9786797-B2 · Oct 10, 2017 · US
Scalable voltage source
US-9741874-B2 · Aug 22, 2017 · US
Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
US-2017229589-A1 · Aug 10, 2017 · US
Highly doped layer for tunnel junctions in solar cells
US-9722131-B2 · Aug 1, 2017 · US
Power semiconductor device with improved stability and method for producing the same
US-9698138-B2 · Jul 4, 2017 · US
Devices having nanoscale structures and methods for making same
US-9691912-B1 · Jun 27, 2017 · US
Frequency-variable terahertz oscillator and method for manufacturing the same
US-2017155361-A1 · Jun 1, 2017 · US
Tunnel Field Effect Transistors
US-2017125556-A1 · May 4, 2017 · US
Semiconductor device including two-dimensional material
US-2017110564-A1 · Apr 20, 2017 · US
Mim/rram structure with improved capacitance and reduced leakage current
US-2017110533-A1 · Apr 20, 2017 · US
Replacement channel TFET
US-9627508-B2 · Apr 18, 2017 · US
Scalable voltage source
US-2017084757-A1 · Mar 23, 2017 · US
Antimonide-based high bandgap tunnel junction for semiconductor devices
US-2017084771-A1 · Mar 23, 2017 · US
Methods of Forming Diodes
US-2017069732-A1 · Mar 9, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D8/70?
- CPC H10D8/70 is the Cooperative Patent Classification code for “Tunnel-effect diodes.”
- How many patents are filed under CPC H10D8/70 (Tunnel-effect diodes)?
- Our database includes 183 publications tagged with this CPC code.
- Is patent activity under CPC H10D8/70 growing?
- Publication counts under this code: 10 in 2024 vs 8 in 2025 (latest complete years).