Highly doped layer for tunnel junctions in solar cells

Patent metadata

Field	Value
Publication number	US-9722131-B2
Application number	US-40479509-A
Country	US
Kind code	B2
Filing date	Mar 16, 2009
Priority date	Mar 16, 2009
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

First claim

What is claimed is:

1. A method of manufacturing a delta-doped interconnection tunnel junction, comprising:
growing epitaxially a first highly doped layer of a tunnel diode on a first photovoltaic subcell or growing epitaxially the first photovoltaic subcell on the first highly doped layer, the first photovoltaic subcell having a dopant concentration less than the first highly doped layer, said first layer using a first dopant;
depositing a delta-doped layer of a second dopant of a same acceptor/donor type as said first dopant on said first highly doped layer of said tunnel diode, said second dopant in said delta-doped layer reaching a dopant concentration substantially greater than a concentration of said first dopant in said first highly doped layer of said tunnel diode; and
growing epitaxially a second highly doped layer of said tunnel diode on said delta-doped layer, said second layer using a third dopant of a complementary acceptor/donor type to said first dopant and said second dopant;
wherein the delta doped layer has an upper surface and a lower surface, the lower surface is directly adjacent to the first highly doped layer and the upper surface is directly adjacent to the second highly doped layer;
wherein each of the first highly doped layer and the second highly doped layer have a dopant concentration in a range greater than 1×10 17 cm −3 to less than 1×10 19 cm −3 .

2. The method of claim 1 , further comprising:
preparing a substrate;
growing epitaxially said first photovoltaic subcell; and
growing epitaxially a second photovoltaic subcell; and
wherein said first photovoltaic subcells is grown on said substrate, said first highly doped layer of said tunnel diode is grown on said first photovoltaic subcell, and said second photovoltaic subcell is grown on said second highly doped layer of said tunnel diode.

3. The method of claim 2 , wherein said first photovoltaic subcell comprises a material having a bandgap lower than said second photovoltaic subcell.

4. The method of claim 3 , wherein said tunnel diode comprises a material having a bandgap equal to or higher than said first photovoltaic cell.

5. The method of claim 1 , said dopant concentration in said delta doped layer is approximately 10 times greater than said concentration of said first dopant in said first highly doped layer of said tunnel diode.

6. The method of claim 1 , said delta doped layer has a dopant concentration of greater than 10 20 cm −3 .

7. The method of claim 1 , wherein a width of said delta doped layer is approximately 20 Angstroms.

8. The method of claim 1 , wherein said first dopant and said second dopant are acceptor type Group II, IV or V dopants and said third dopant is a donor type Group IV or VI dopant.

Assignees

• Fetzer Christopher M
• Boeing Co

Inventors

• Fetzer Christopher M

Classifications

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/0687

  Electricity · mapped topic

• H01L31/035272

  Electricity · mapped topic

• H01L29/88

  Electricity · mapped topic

• H01L31/0693

  Electricity · mapped topic