Selector for RRAM

Patent metadata

Field	Value
Publication number	US-9786795-B2
Application number	US-201414508906-A
Country	US
Kind code	B2
Filing date	Oct 7, 2014
Priority date	Oct 7, 2013
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

The disclosed technology generally relates to semiconductor devices and more particularly to selector devices for memory devices having a resistance switching element, particularly resistive random access memory (RRAM) devices. In one aspect, a selector device includes a first barrier structure comprising a first metal and a first semiconductor or a first low bandgap dielectric material, and a second barrier structure comprising a second metal and a second semiconductor or a second low bandgap dielectric material. The selector device additionally includes an insulator interposed between the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material. The first barrier structure, the insulator, and the second barrier structure are stacked to form a metal/semiconductor or low bandgap dielectric/insulator/semiconductor or low bandgap dielectric/metal structure.

First claim

What is claimed is:

1. A selector device, comprising:
a first barrier structure comprising a first metal contacting a first semiconductor or a first low bandgap dielectric material;
a second barrier structure comprising a second metal contacting a second semiconductor or a second low bandgap dielectric material; and
an insulator contacting each of and interposed between the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material,
wherein the first barrier structure, the insulator, and the second barrier structure are stacked to form a metal/semiconductor or low bandgap dielectric/insulator/semiconductor or low bandgap dielectric/metal structure,
wherein the insulator has a band gap that is between 2 eV and 6 eV, and wherein the insulator has a higher electron barrier height compared to an electron barrier height of each of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material.

2. The selector device of claim 1 , wherein at least one of the first metal and the second metal is a metallic compound.

3. The selector device of claim 1 , wherein at least one of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material has a band gap between 1 eV and 4 eV.

4. The selector device of claim 1 , wherein at least one of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material is formed of silicon.

5. The selector device of claim 1 , wherein at least one of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material is formed of amorphous silicon.

6. The selector device of claim 1 , wherein the insulator comprises a stack of multiple dielectric materials.

7. The selector device of claim 1 , wherein the insulator is formed of a Si-rich SiN layer or a nitrogen-doped Si layer.

8. The selector device of claim 1 , wherein the barrier heights and thicknesses of the insulator, the first semiconductor or the first low bandgap dielectric material, and the second semiconductor or the second low bandgap dielectric material are such that the selector device tunnels a current density exceeding 1×10 6 A/cm 2 .

9. The selector device of claim 8 , wherein the insulator has a conduction band energy level that is higher than a conduction band energy level of at least one of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material by at least 0.2 eV.

10. The selector device of claim 1 , wherein at least one of the first metal and the second metal is TiN, wherein at least one of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material is formed of amorphous silicon, and wherein the insulator is formed of one of Ta 2 O 5 , AlTaO x or TaSiO x .

11. The selector device of claim 1 , wherein the first metal and the second metal are formed of the same material, and wherein the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material are formed of the same material.

12. The selector device of claim 11 , wherein the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material have the same thickness such that the selector device is a symmetric device configured to pass substantially the same magnitude of current under the same bias magnitude under opposite polarities.

13. The selector device of claim 10 , wherein each of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material is a layer of amorphous silicon.

14. The selector device of claim 13 , wherein the insulator has a thickness between an atomic monolayer thickness of the insulator and 10 nm.

15. The selector device of claim 14 , wherein each of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material provides the electron barrier height between 0.4 eV and 1 eV.

16. The selector device of claim 15 , wherein the layer of amorphous silicon has a thickness between 2 nm and 10 nm such that, when biased, a nonlinearity factor defined as ratio between a current density at a target voltage and a current density at half the target voltage exceeds 1000.

17. A selector device, comprising:
a first semiconductor or a first low bandgap dielectric material contacting a first metal and having a first electron barrier height relative to the first metal;
a second semiconductor or a second low bandgap dielectric material contacting a second metal and having a second electron barrier relative to the second metal; and
an oxide contacting each of and interposed between the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material,
wherein the oxide has a band gap that is between 2 eV and 6 eV, a third electron barrier height relative to the first metal that is higher than the first barrier height by at least 0.2 eV and a fourth electron barrier height relative to the second metal that is higher than the second barrier height by at least 0.2 eV, and
wherein each of the first semiconductor or the first low bandgap dielectric material, the second semiconductor or a second low bandgap dielectric material and the oxide has a thickness between an atomic monolayer thickness of the respective material and 10 nm, and
wherein the selector is configured to flow current when biased such that a ratio between current a target voltage and current at half the target voltage exceeds 1000.

18. The selector device of claim 17 , wherein one or both of the first metal and the second metal is TiN, wherein one or both of the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material is formed of amorphous silicon, and wherein the oxide is formed of one of Ta 2 O 5 , AlTaO x or TaSiO x .

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Govoreanu Bogdan
• Adelmann Christoph
• Zhang Leqi
• Jurczak Malgorzata

Classifications

• H01L29/88

  Electricity · mapped topic

• H01L27/2418

  Electricity · mapped topic

• H01L45/00

  Electricity · mapped topic

• H01L29/16

  Electricity · mapped topic

• H01L29/861 Primary

  Electricity · mapped topic