Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2017229589-A1
Application number	US-201415501514-A
Country	US
Kind code	A1
Filing date	Oct 14, 2014
Priority date	Aug 21, 2014
Publication date	Aug 10, 2017
Grant date	—

Abstract

Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.

First claim

What is claimed is:

1 . A tunneling diode comprising a graphene-silicon quantum dot hybrid structure, the tunneling diode comprising: a hybrid structure composed of a silicon quantum dot layer comprising silicon (Si) quantum dots, each of which is formed in a thin film of a silicon oxide, and doped graphene formed on the silicon quantum dot layer; and an electrode formed upper and lower parts of the hybrid structure.

2 . The tunneling diode according to claim 1 , wherein the tunneling diode has an ideal factor of 1 to 2 according to a doping concentration of the doped the graphene and a size of the silicon quantum dots.

3 . The tunneling diode according to claim 1 , wherein the silicon quantum dot layer comprise silicon quantum dots formed in a SiO 2 thin film by sequentially laminating SiO 2 and SiOx thin films on a substrate and then thermally treating at 1000° C. to 1200° C. in a nitrogen atmosphere.

4 . The tunneling diode according to claim 3 , wherein x is controlled to have a value of 0.8 to 1.6 and the size of the silicon quantum dots are controlled to correspond to a value of x.

5 . The tunneling diode according to claim 4 , wherein each of the SiO 2 and SiOx thin films is sequentially laminated 23 to 25 times to a thickness unit of 2 nm each time.

6 . The tunneling diode according to claim 1 , wherein a doping concentration of the doped graphene is controlled by treating graphene formed by reacting a catalyst layer with a mixed gas containing carbon and depositing a reacted product on the catalyst layer by chemical vapor deposition (CVD).

7 . The tunneling diode according to claim 6 , wherein the hybrid structure is formed by transferring the deposited graphene onto the silicon quantum dot layer.

8 . The tunneling diode according to claim 6 , wherein the doped graphene is formed by spin coating AuCl 3 , which has a concentration of 10 to 30 mM, on the deposited graphene and performing annealing at 90° C. to 110° C.

9 . A method of manufacturing a photodiode comprising a graphene-silicon quantum dot hybrid structure, the method comprising:
forming a silicon quantum dot layer comprising silicon quantum dots, each of which is formed in a thin film of a silicon oxide, on a substrate; forming a hybrid structure by forming doped graphene on the silicon quantum dot layer; and forming an electrode on upper and lower parts of the hybrid structure.

10 . The method according to claim 9 , wherein the forming of the silicon quantum dot layer comprises sequentially laminating SiO 2 and SiOx thin films on a substrate and then thermally treating at 1000° C. to 1200° C. in a nitrogen atmosphere to form the silicon quantum dots in the SiO 2 thin film, wherein x is controlled to have a value of 0.8 to 1.6 and the sizes of the silicon quantum dots is controlled to correspond to a value of x.

11 . The method according to claim 9 , wherein the forming of the hybrid structure comprises forming graphene on a catalyst layer by reacting the catalyst layer with a mixed gas containing carbon and thus performing deposition by chemical vapor deposition (CVD); transferring the formed graphene on the silicon quantum dot layer; and doping graphene by spin-coating AuCl 3 at a concentration of 10 to 30 mM, and performing annealing at 90° C. to 110° C.

Assignees

• Univ-Industry Coop Group Of Kyung Hee Univ

Inventors

• Choi Suk Ho
• Shin Dong Hee
• Kim Sung

Classifications

• C01B32/20 Primary

  Graphite · CPC title

• Y10S977/896

  Chemical synthesis, e.g. chemical bonding or breaking · CPC title

• Y10S977/774

  Exhibiting three-dimensional carrier confinement, e.g. quantum dots · CPC title

• C01B33/023

  by reduction of silica or {free} silica-containing material · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title