Semiconductor device including two-dimensional material

Patent metadata

Field	Value
Publication number	US-9991371-B2
Application number	US-201615291607-A
Country	US
Kind code	B2
Filing date	Oct 12, 2016
Priority date	Oct 16, 2015
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A semiconductor device includes a substrate, a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region, and a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer, the second region of the 2D material layer including an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region;
a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer; and
a passivation layer formed to cover the first region of the 2D material layer,
wherein the second region of the 2D material layer includes an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.

2. The semiconductor device of claim 1 , wherein a difference between a first work function of the oxygen adsorption material layer and a second work function of the 2D material layer in the first region is 0.3 eV or more.

3. The semiconductor device of claim 2 , wherein the 2D material layer is formed of MoS 2 .

4. A semiconductor device comprising:
a substrate;
a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region; and
a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer,
wherein the second region of the 2D material layer includes an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region, and
wherein an oxygen adsorption rate of the oxygen adsorption material layer formed on the surface of the second region of the 2D material layer is 2% or more.

5. The semiconductor device of claim 4 , wherein the oxygen adsorption rate of the oxygen adsorption material layer formed on the surface of the second region of the 2D material layer is in a range of 2% to 30%.

6. The semiconductor device of claim 1 , wherein the source electrode and the drain electrode are formed of different materials.

7. The semiconductor device of claim 1 , wherein one electrode among the source and drain electrodes is formed of Cr or Au and another electrode among the source and drain electrodes is formed of Pd.

8. The semiconductor device of claim 1 , wherein the passivation layer is formed of an insulating material configured to prevent oxygen from penetrating a surface of the first region.

9. A semiconductor device including a multi-layered structure, the semiconductor device comprising:
a semiconductor layer formed of a 2D material and having a first region and a second region, wherein the semiconductor layer includes an oxygen adsorption material layer in which oxygen is adsorbed on a first surface of the 2D material in the second region; and
a non-semiconductor layer provided on a second surface of the semiconductor layer.

10. The semiconductor device of claim 9 , wherein:
the semiconductor device is a tunneling device; and
the semiconductor layer is a tunneling layer.

11. The semiconductor device of claim 9 , wherein:
the semiconductor device is a binary junction transistor (BJT); and
the semiconductor layer is a tunneling layer.

12. The semiconductor device of claim 9 , wherein:
the semiconductor device is a barristor; and
the semiconductor layer is a channel layer.

13. The semiconductor device of claim 9 , wherein:
the semiconductor device is a field effect transistor (FET); and
the semiconductor layer is a channel layer.

14. The semiconductor device of claim 9 , wherein:
the first region is adjacent to the second region; and
the semiconductor device is a diode.

15. A semiconductor device comprising:
a substrate;
a 2D material layer formed on the substrate and having a first region and a second region adjacent to the first region; and
a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer,
wherein a first oxygen adsorption rate which is a first amount of oxygen adsorbed on a first surface of the first region of the 2D material layer is different from a second oxygen adsorption rate which is a second amount of oxygen adsorbed on a second surface of the second region of the 2D material layer.

16. The semiconductor device of claim 15 , wherein the first oxygen adsorption rate is 0% and the second oxygen adsorption rate is 2% or more.

17. The semiconductor device of claim 16 , wherein the second oxygen adsorption rate is in a range of 2% to 30%.

Assignees

• Samsung Electronics Co Ltd
• Research & Business Found Sungkyunkwan Univ

Inventors

• Kim Un Jeong
• Kim Hyo Chul
• Roh Young Geun
• Park Yeon Sang
• Chung Jae Gwan
• Lee Si Young
• Lee Young Hee

Classifications

• H01L29/778 Primary

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic

• H01L29/66037

  Electricity · mapped topic

• H01L29/885

  Electricity · mapped topic

• H01L29/7391

  Electricity · mapped topic