MIM/RRAM structure with improved capacitance and reduced leakage current

Patent metadata

Field	Value
Publication number	US-9825117-B2
Application number	US-201615392169-A
Country	US
Kind code	B2
Filing date	Dec 28, 2016
Priority date	Jun 27, 2014
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

Some embodiments of the present disclosure provide an integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure. The MIM capacitor structure includes a lower metal capacitor electrode, an upper metal capacitor electrode, and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode. The capacitor dielectric is made up of an amorphous oxide/nitride matrix and a plurality of metal or metal oxide/nitride nano-particles that are randomly distributed over the volume of amorphous oxide/nitride matrix.

First claim

What is claimed is:

1. An integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure comprising:
a lower metal capacitor electrode;
an upper metal capacitor electrode; and
a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode, wherein the capacitor dielectric is made up of an amorphous oxide or amorphous nitride matrix and a plurality of metal or metal nitride nano-particles that are randomly distributed over a volume of the amorphous oxide or amorphous nitride matrix.

2. The IC device of claim 1 , wherein the amorphous oxide or amorphous nitride matrix extends continuously between the upper and lower metal capacitor electrodes so as to abut opposing inner faces of the upper and lower metal capacitor electrodes.

3. The IC device of claim 1 , wherein the metal or metal nitride nano-particles have average diameters of less than 10 nanometers in size.

4. The IC device of claim 1 , wherein the metal or metal nitride nano-particles have average diameters ranging between 2 nanometers and 10 nanometers.

5. The IC device of claim 1 , wherein the amorphous oxide or amorphous nitride matrix is made up of amorphous SiO 2 , amorphous Al 2 O 3 , amorphous HfO 2 , amorphous SiON, or amorphous Si 3 N 4 .

6. The IC device of claim 1 , wherein the metal or metal nitride nano-particles include Ti, Ta, Nb, Zr, Hf, or a combination of the foregoing.

7. The IC device of claim 1 , wherein the lower metal capacitor electrode and the upper metal capacitor electrode respectively define electrodes of a resistive random access memory (RRAM) cell or respectively define an anode of a diode and a cathode of a diode.

8. The IC device of claim 1 , wherein the IC device is on a semiconductor substrate that includes a plurality of active devices, wherein the active devices are coupled by a series of horizontal metal layers arranged over the semiconductor substrate to establish an interconnect structure, and wherein the MIM capacitor structure is formed within or over the interconnect structure.

9. An integrated circuit (IC) comprising:
a lower TiN electrode;
a dielectric layer over and contacting the lower TiN electrode, wherein the dielectric layer comprises an amorphous nitride matrix and a plurality of metal or metal oxide or metal nitride nano-particles, wherein the amorphous nitride matrix has a thickness less than about one hundred angstroms and a dielectric constant greater than about twenty, and wherein the metal or metal oxide or metal nitride nano-particles are randomly distributed over an entire volume of the amorphous nitride matrix and have individual diameters less than about ten nanometers; and
an upper TiN electrode over and contacting the dielectric layer.

10. The IC of claim 9 , wherein the metal or metal oxide or metal nitride nano-particles include Ti, Zr, Hr, or a combination of the foregoing.

11. The IC of claim 9 , wherein spacing between neighboring nano-particles in the amorphous nitride matrix varies randomly.

12. The IC of claim 9 , wherein sizes of the metal or metal oxide or metal nitride nano-particles vary over the entire volume of the amorphous nitride matrix.

13. The IC of claim 9 , wherein the metal or metal oxide or metal nitride nano-particles make up about 30-40 percent of the entire volume of the dielectric layer, and wherein the amorphous nitride matrix makes up a remaining percentage of the entire volume of the dielectric layer.

14. The IC of claim 9 , further comprising:
a semiconductor substrate; and
an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a second dielectric layer and an alternating stack of conductive layers and vias in the second dielectric layer, and wherein the upper and lower TiN electrodes and the dielectric layer are in the interconnect structure.

15. The IC of claim 14 , wherein the lower TiN electrode and the dielectric layer have the same width, wherein the lower TiN electrode has a pair of outer sidewalls on opposite sides of the lower TiN electrode, wherein the outer sidewalls of the lower TiN electrode are respectively aligned with outer sidewalls of the dielectric layer, and wherein the upper TiN electrode is spaced between the outer sidewalls of the lower TiN electrode.

16. The IC of claim 9 , further comprising:
a second dielectric layer;
a conductive interconnect recessed into the second dielectric layer, such that a top surface of the conductive interconnect is even with a top surface of the second dielectric layer; and
a third dielectric layer over the second dielectric layer and the conductive interconnect, wherein the third dielectric layer is a different material than the second dielectric layer, and wherein the lower TiN electrode overhangs the third dielectric layer and extends through the third dielectric layer to contact with the conductive interconnect.

17. The IC of claim 16 , wherein the dielectric layer has a first sidewall, wherein the upper TiN electrode has a second sidewall neighboring the first sidewall, and wherein the IC further comprises:
a spacer over and contacting the dielectric layer, between the first and second sidewalls.

18. An integrated circuit (IC) device including a metal-insulator-metal (MIM) capacitor structure comprising:
a lower TiN capacitor electrode;
an upper TiN capacitor electrode;
an amorphous SiO 2 capacitor dielectric separating the lower TiN capacitor electrode from the upper TiN capacitor electrode, wherein the amorphous SiO 2 capacitor dielectric has a thickness of less than about one hundred angstroms and has a dielectric constant of greater than about twenty; and
a plurality of metal or metal nitride nano-particles randomly distributed over an entire volume of the amorphous SiO2 capacitor dielectric between the upper and lower TiN capacitor electrodes, wherein the metal or metal nitride nano-particles have individual diameters of less than about ten nanometers.

19. The IC device of claim 18 , wherein the metal or metal nitride nano-particles include Ti, Zr, Hf, or a combination of the foregoing.

20. The IC device of claim 18 , wherein spacing between neighboring metal or metal nitride nano-particles in the amorphous SiO 2 capacitor dielectric varies randomly, and wherein sizes of the metal or metal nitride nano-particles vary over the entire volume of the amorphous SiO 2 capacitor dielectric.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Jian-Shiou
• Chang Yao-Wen
• Lin Hsing-Lien
• Tsai Cheng-Yuan
• Tsai Chia-Shiung

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title