Graphene nanoribbon electronic device and method of manufacturing thereof

Patent metadata

Field	Value
Publication number	US-9786797-B2
Application number	US-201615238973-A
Country	US
Kind code	B2
Filing date	Aug 17, 2016
Priority date	Sep 2, 2015
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

An electronic device, includes: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity.

First claim

What is claimed is:

1. An electronic device, comprising: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group, includes an n-type doping layer layered on a first portion of a surface of the graphene nanoribbon and has an n-type polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group, includes one of a second portion of the surface of the graphene nanoribbon exposed to the atmosphere and a p-type doping layer layered on the second portion of the surface of the graphene nanoribbon and has a p-type second polarity different from the n-type polarity.

2. The electronic device according to claim 1 , wherein electron affinity of the first graphene is greater than electron affinity of the second graphene.

3. The electronic device according to claim 1 , wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction.

4. The electronic device according to claim 1 , wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (Cl, H), (F, OH), (Cl, OH), (F, NH 2 ), (Cl, NH 2 ), (F, CH 3 ), (Cl, CH 3 ), (H, NH 2 ), (OH, NH 2 ), (OH, CH 3 ), and (H, OH).

5. The electronic device according to claim 1 , wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.

6. The electronic device according to claim 1 , wherein an electrostatic capacitance is formed between the first electrode and the second electrode.

7. The electronic device according to claim 6 , wherein the first electrode and the second electrode are partially superimposed with a dielectric interposed between the first electrode and the second electrode to form the electrostatic capacitance.

8. The electronic device according to claim 6 , wherein a side surface of the first electrode and a side surface of the second electrode face each other in close proximity and the electrostatic capacitance is formed.

9. The electronic device according to claim 6 , wherein the total electrostatic capacitance present between the first electrode and the second electrode is q 2 /2 kT or higher where q is an elementary charge, k is a Boltzmann constant, and T is an operating temperature.

10. A method of manufacturing an electronic device, comprising:
forming a graphene nanoribbon having a first graphene that is terminated on an edge by a first terminal group and has a first polarity and a second graphene that is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different to the first polarity; and
forming a first electrode coupled to the first graphene and a second electrode coupled to the second graphene,
wherein each of the first graphene and the second graphene are formed by one process of a first process in which each of the first graphene and the second graphene are formed as a p-type by exposing the graphene nanoribbon to the atmosphere or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon and a second process in which each of the first graphene and the second graphene are formed as a p-type by layering a p-type doping layer on a portion of a surface of the graphene nanoribbon or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon.

11. The method according to claim 10 , wherein the first polarity of the first graphene is n-type and the second polarity of the second graphene is p-type and electron affinity of the first graphene is greater than electron affinity of the second graphene.

12. The method according to claim 10 , wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction.

13. The method according to claim 10 , wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (Cl, H), (F, OH), (Cl, OH), (F, NH 2 ), (Cl, NH 2 ), (F, CH 3 ), (Cl, CH 3 ), (H, NH 2 ), (OH, NH 2 ), (OH, CH 3 ), and (H, OH).

14. The method according to claim 10 , wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.

15. The method according to claim 10 , wherein an electrostatic capacitance is formed between the first electrode and the second electrode.

16. An electronic device, comprising:
a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and
a second electrode coupled to the second graphene,
wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity,
wherein an electrostatic capacitance is formed between the first electrode and the second electrode,
wherein the total electrostatic capacitance present between the first electrode and the second electrode is q 2 /2 kT or higher where q is an elementary charge, k is a Boltzmann constant, and T is an operating temperature.

Assignees

• Fujitsu Ltd

Inventors

• Harada Naoki
• Jippo Hideyuki

Classifications

• H10P95/92

  Formation of n- or p-type semiconductors, e.g. doping of graphene · CPC title

• H10D8/053

  of heterojunction diodes or of tunnel diodes · CPC title

• H10D8/051

  of Schottky diodes · CPC title

• H10D62/882

  Graphene · CPC title

• H01L21/041

  Electricity · mapped topic