Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof
US-9530833-B2 · Dec 27, 2016 · US
Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B53/00 |
| Official title | Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors |
| Display label | Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors |
| Total patents | 620 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 30 |
| 2016 | 32 |
| 2017 | 28 |
| 2018 | 50 |
| 2019 | 73 |
| 2020 | 61 |
| 2021 | 96 |
| 2022 | 74 |
| 2023 | 70 |
| 2024 | 57 |
| 2025 | 40 |
| 2026 | 9 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Memory Devices and Methods of Manufacture Thereof
US-2016359052-A1 · Dec 8, 2016 · US
Electronic device and method for fabricating the same
US-9515250-B2 · Dec 6, 2016 · US
RPS assisted RF plasma source for semiconductor processing
US-9502218-B2 · Nov 22, 2016 · US
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
US-9502636-B2 · Nov 22, 2016 · US
Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
US-2016336334-A1 · Nov 17, 2016 · US
Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
US-2016336333-A1 · Nov 17, 2016 · US
Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
US-9460770-B1 · Oct 4, 2016 · US
Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
US-2016268273-A1 · Sep 15, 2016 · US
Resistance Variable Memory Structure and Method of Forming the Same
US-2016268507-A1 · Sep 15, 2016 · US
Lanio3 thin-film-forming composition, and method for forming lanio3 thin-film in which said composition is used
US-2016254268-A1 · Sep 1, 2016 · US
Memory devices and methods of manufacture thereof
US-9431107-B2 · Aug 30, 2016 · US
Memory Cells
US-2016240545-A1 · Aug 18, 2016 · US
Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
US-9412705-B2 · Aug 9, 2016 · US
Resistance variable memory structure and method of forming the same
US-2016225988-A1 · Aug 4, 2016 · US
Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device
US-9406684-B2 · Aug 2, 2016 · US
Semiconductor device and method of manufacturing the same
US-2016211269-A1 · Jul 21, 2016 · US
Nems devices with series ferroelectric negative capacitor
US-2016207761-A1 · Jul 21, 2016 · US
Semiconductor device and method for manufacturing semiconductor device
US-9390781-B2 · Jul 12, 2016 · US
Semiconductor device and method for manufacturing the same
US-9373676-B2 · Jun 21, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B53/00?
- CPC H10B53/00 is the Cooperative Patent Classification code for “Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors.”
- How many patents are filed under CPC H10B53/00 (Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors)?
- Our database includes 620 publications tagged with this CPC code.
- Is patent activity under CPC H10B53/00 growing?
- Publication counts under this code: 57 in 2024 vs 40 in 2025 (latest complete years).