Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication
US-12166122-B2 · Dec 10, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/516 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 1,393 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 16 |
| 2016 | 36 |
| 2017 | 41 |
| 2018 | 63 |
| 2019 | 108 |
| 2020 | 189 |
| 2021 | 190 |
| 2022 | 218 |
| 2023 | 240 |
| 2024 | 238 |
| 2025 | 54 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Continuous gate and fin spacer for advanced integrated circuit structure fabrication
US-2024038578-A1 · Feb 1, 2024 · US
Method of fabricating epitaxial gate dielectrics and semiconductor device of the same
US-9853150-B1 · Dec 26, 2017 · US
Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistor
US-2017309488-A1 · Oct 26, 2017 · US
NEMS devices with series ferroelectric negative capacitor
US-9755041-B2 · Sep 5, 2017 · US
Pure boron for silicide contact
US-9735248-B2 · Aug 15, 2017 · US
MOS devices with ultra-high dielectric constants and methods of forming the same
US-9614079-B2 · Apr 4, 2017 · US
Transistors, memory cells and semiconductor constructions
US-9590066-B2 · Mar 7, 2017 · US
Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer
US-2016372478-A1 · Dec 22, 2016 · US
Ferroelectric finfet
US-2016358915-A1 · Dec 8, 2016 · US
Sensor arrangement comprising a carrier substrate and a ferroelectric layer and method for producing and using the sensor arrangement
US-9515157-B2 · Dec 6, 2016 · US
Field effect semiconductor component and methods for operating and producing it
US-9496364-B2 · Nov 15, 2016 · US
Tunneling field effect transistor (tfet) having a semiconductor fin structure
US-2016322479-A1 · Nov 3, 2016 · US
Pure boron for silicide contact
US-9484431-B1 · Nov 1, 2016 · US
Semiconductor device
US-2016308070-A1 · Oct 20, 2016 · US
Tunnel MOSFET with Ferroelectric Gate Stack
US-2016308021-A1 · Oct 20, 2016 · US
Use of ambient-robust solution processing for preparing nanoscale organic ferroelectric films
US-2016284714-A1 · Sep 29, 2016 · US
Ferroelectric FinFET
US-9449972-B1 · Sep 20, 2016 · US
Silylene compositions and methods of use thereof
US-9443736-B2 · Sep 13, 2016 · US
Ferroelectric finfet
US-2016260714-A1 · Sep 8, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/516?
- CPC H01L29/516 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/516 (Electricity)?
- Our database includes 1,393 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/516 growing?
- Publication counts under this code: 238 in 2024 vs 54 in 2025 (latest complete years).