Field effect semiconductor component and methods for operating and producing it

Patent metadata

Field	Value
Publication number	US-9496364-B2
Application number	US-201514754907-A
Country	US
Kind code	B2
Filing date	Jun 30, 2015
Priority date	Jun 30, 2014
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

In accordance with one component, a power field effect transistor is proposed, including a substrate, a channel, a gate electrode, and a gate insulator. The gate insulator is arranged at least partly between the gate electrode and the channel and includes a material having a hysteresis with respect to its polarization, such that a switching state of the transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off. Furthermore, a half-bridge circuit is proposed, including a high-side transistor in accordance with the construction according to the disclosure, and a low-side transistor, and also methods and circuits for driving.

First claim

What is claimed is:

1. A transistor, comprising:
a drain region having a first conductivity type,
a body region having a second conductivity type disposed in a portion of the drain region and forming a lateral interface and a vertical interface with the drain region,
a source region having the first conductivity type formed in the body region and defining a channel disposed in the body region between the source and the lateral interface,
a gate electrode, and
a gate insulator,
wherein the gate insulator is arranged at least partly between the gate electrode and the channel and is disposed over the channel, and wherein the gate insulator comprises a material having a hysteresis with respect to its polarization, such that a switching state of the transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off,
wherein the first conductivity type and the second conductivity type are different.

2. The transistor as claimed in claim 1 , wherein the gate insulator comprises a ferroelectric material.

3. The transistor as claimed in claim 1 , wherein the transistor remains in a state defined by a first voltage pulse at the gate electrode until a second voltage pulse, different than the first, is applied to the gate electrode.

4. The transistor as claimed in claim 1 , wherein the gate insulator comprises at least one of lead zirconium titanate, barium titanate, hafnium aluminum oxide, and strontium bismuth tantalate.

5. The transistor as claimed in claim 1 , wherein the gate insulator has a layer step comprising at least one of SrBi 2 Ta 2 O 9 , (HfO 2 ) x (Al 2 O 3 ) 1-x , Hf—Al—O and HfO 2 .

6. The transistor as claimed in claim 1 , wherein the gate insulator is designed such that the gate insulator becomes paraelectric when a defined limit temperature is exceeded.

7. The transistor as claimed in claim 6 , which is designed such that the transistor is turned off partly or completely when a defined limit temperature is exceeded, this resulting in a protective effect against overheating and/or overcurrent.

8. The transistor as claimed in claim 6 , wherein the gate insulator is designed such that its dielectric constant decreases by more than a factor of 2 when a defined limit temperature is exceeded, as a result of which the transistor is turned off partly or completely and, as overheating protection, can no longer be turned on until the limit temperature is undershot again.

9. The transistor as claimed in claim 1 , wherein the gate insulator has a Curie temperature in the range of approximately 150° C. to approximately 250° C.

10. The transistor as claimed in claim 1 , which is a vertical power MOSFET, a compensation component, or an Insulated Gate Bipolar Transistor (IGBT).

11. A transistor as claimed in claim 1 , which comprises at least one of the substances Si, SiC, and GaN.

12. The transistor as claimed in claim 1 , wherein the transistor is a depletion-mode transistor which is turned off when a limit temperature is exceeded.

13. The transistor as claimed in claim 1 , wherein the transistor is a depletion-mode transistor which can be changed over to enhancement-mode during operation.

14. A half-bridge circuit, comprising a high-side transistor and a low-side transistor, wherein the high-side transistor comprises:
a drift zone,
a channel,
a gate electrode, and
a gate insulator,
wherein the gate insulator is arranged at least partly between the gate electrode and the channel and comprises a material having a hysteresis with respect to its polarization, such that a switching state of the high-side transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off.

15. The half-bridge circuit as claimed in claim 14 , wherein the gate electrode of the high-side transistor is driven via one of: an electrical transformer, and an RC element.

16. A transistor, comprising:
a drift zone,
a channel,
a gate electrode, and
a gate insulator,
wherein the gate insulator is arranged at least partly between the gate electrode and the channel and comprises a material having a hysteresis with respect to its polarization, such that a switching state of the transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off,

wherein the gate insulator comprises, in addition to a first ferroelectric layer, at least one of the following:
a second ferroelectric, different than the first ferroelectric layer,
an SiO 2 layer, and
an insulation layer composed of dielectric materials different than SiO 2 .

17. The transistor as claimed in claim 16 , which comprises at least one of the substances Si, SiC, and GaN.

18. The transistor as claimed in claim 16 , wherein the transistor is a depletion-mode transistor which is turned off when a limit temperature is exceeded.

19. The transistor as claimed in claim 16 , wherein the transistor is a depletion-mode transistor which can be changed over to enhancement-mode during operation.

Assignees

• Infineon Technologies Ag

Inventors

• Irsigler Peter
• Laven Johannes Georg
• Schulze Hans-Joachim
• Strack Helmut

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title

• H10D30/701

  IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs · CPC title