Digital filters with memory
US-2017330612-A1 · Nov 16, 2017 · US
using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)}
using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)} · Cooperative Patent Classification (CPC)
Computing, optics, measurement, and control technologies.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | G11C13/02 |
| Official title | using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)} |
| Display label | using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)} |
| Total patents | 227 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 38 |
| 2016 | 21 |
| 2017 | 11 |
| 2018 | 8 |
| 2019 | 20 |
| 2020 | 13 |
| 2021 | 22 |
| 2022 | 24 |
| 2023 | 25 |
| 2024 | 26 |
| 2025 | 15 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Resistive random-access memory cells
US-9530493-B2 · Dec 27, 2016 · US
Resistive memory device, operating method thereof, and system having the same
US-9502105-B2 · Nov 22, 2016 · US
Path isolation in a memory device
US-9466365-B2 · Oct 11, 2016 · US
Nano sensor
US-9453814-B2 · Sep 27, 2016 · US
Nonvolatile memory device and method for testing nonvolatile memory device using variable resistance material
US-9443582-B2 · Sep 13, 2016 · US
Interrupted write memory operation in a serial interface memory with a portion of a memory address
US-9442867-B2 · Sep 13, 2016 · US
Electronic device
US-9437289-B2 · Sep 6, 2016 · US
Path isolation in a memory device
US-2016225447-A1 · Aug 4, 2016 · US
Multi-interface memory with access control
US-9405475-B2 · Aug 2, 2016 · US
Method of operating nonvolatile memory device comprising resistance material
US-9405615-B2 · Aug 2, 2016 · US
Resistive random-access memory cells
US-2016196874-A1 · Jul 7, 2016 · US
Variable resistance memory device and storage devices using the same
US-9368180-B2 · Jun 14, 2016 · US
Method for reading a third-dimensional embedded re-writeable non-volatile memory and registers
US-2016111157-A1 · Apr 21, 2016 · US
Resistive random-access memory cells
US-9305636-B2 · Apr 5, 2016 · US
Path isolation in a memory device
US-9293202-B2 · Mar 22, 2016 · US
Multilayer memory array
US-9293200-B2 · Mar 22, 2016 · US
Encoding and decoding data to accommodate memory cells having stuck-at faults
US-9274884-B2 · Mar 1, 2016 · US
System and method for intelligently flushing data from a processor into a memory subsystem
US-9269438-B2 · Feb 23, 2016 · US
Methods for a phase-change memory array
US-9251897-B2 · Feb 2, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC G11C13/02?
- CPC G11C13/02 is the Cooperative Patent Classification code for “using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)}.”
- How many patents are filed under CPC G11C13/02 (using elements whose operation depends upon chemical change {(G11C13/0009 takes precedence)})?
- Our database includes 227 publications tagged with this CPC code.
- Is patent activity under CPC G11C13/02 growing?
- Publication counts under this code: 26 in 2024 vs 15 in 2025 (latest complete years).