Nano sensor

Patent metadata

Field	Value
Publication number	US-9453814-B2
Application number	US-201514802174-A
Country	US
Kind code	B2
Filing date	Jul 17, 2015
Priority date	Apr 6, 2004
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A device includes an upper metallic layer, a lower layer, and a nano sensor array positioned between the upper and lower layers to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object.

First claim

What is claimed is:

1. A device, comprising:
an upper metallic layer,
a lower layer,
a nano sensor array positioned between the upper and lower layers to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object, and
a matrix film on the nano sensor array wherein a physical parameter of the matrix film changes to measure gas or liquid concentration.

2. The device of claim 1 , comprising an array of switching medium sandwiched between the upper and lower layers and disposed in rows and columns and constructed either above or below the matrix.

3. The device of claim 1 , further comprising a driver circuit for selectively controlling first signal electrodes or second signal electrodes.

4. The device of claim 3 , wherein the circuit includes one or more of a sense amplifier, an input-output buffer, an X address decoder, a Y address decoder, and an address buffer.

5. The device of claim 1 , wherein a substrate includes a silicon-on-insulator wafer.

6. The device of claim 1 , wherein a switching medium is deposited on the substrate or spin-coated over the substrate.

7. The device of claim 1 , comprising multiple levels of stacked cells each having a switching medium sandwiched between the upper and lower layers.

8. The device of claim 1 , wherein the nano sensor is compatible with CMOS fabrication.

9. The device of claim 1 , further comprising an array of redundant sensor elements.

10. The device of claim 1 , comprising gold electrodes where the nano-sensors self-assemble.

11. The device of claim 1 comprising a permeable layer is formed above the nano-sensors to protect the nano sensor array and semiconductor elements while allowing the gas, chemical or biological object to get to the nano sensor array.

12. The device of claim 11 , the layer is comprising a gas sensitive film containing or covering nano sensors and when the gas sensitive film is exposed to different the gas, chemical or biological object, a resistance changes.

13. The device of claim 11 , wherein for sensing air quality, comprising a sensor film readily oxidized (by NO 2 or O 2 ) or reduced (by CO or NH 3 ).

14. The device of claim 1 , wherein upon oxidation or reduction, the physical parameter of the matrix film changes to measure gas concentration.

15. The device of claim 1 , wherein the nano sensor array is ultrasonically activated to detect the gas, chemical or biological object.

16. The device of claim 1 , wherein the nano sensor array is deposited over an ultrasonic vibrator.

17. The device of claim 16 , wherein when the gas, chemical or biological object is absorbed by the nano sensor array and change mechanical property that influence vibration amplitude or phase and detected by monitoring vibrational characteristics of an oscillator.

18. The device of claim 17 , wherein bulk wave detection is used to detect mass loading that occurs when minute quantities of materials are deposited over the surface of the oscillator.

19. A device, comprising:
an upper metallic layer,
a lower layer, and
a resistive, optical or magnetic nano sensor positioned between the upper and lower layers wherein nanoparticles form a conduction path between the upper and lower layers, and
a matrix film on the nanoparticles, wherein a physical parameter of the matrix film changes to measure gas or liquid concentration.

20. A electronic device, comprising:
a first layer fabricated in silicon using semiconductor fabrication techniques;
a second layer formed next to the first layer to provide data storage, the second layer having a lower layer formed next to the first layer; a resistive sensor element; and an upper layer formed next to the resistive element, wherein resistance changes when encountering a gas, a chemical, or a biological object, and
a matrix film on the second layer wherein a physical parameter of the matrix film changes to measure gas or liquid concentration.

Assignees

• Tran Bao

Inventors

• Tran Bao

Classifications

• G01N33/0034

  comprising neural networks or related mathematical techniques · CPC title

• G11B9/14 Primary

  using microscopic probe means {, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information (marking using electrical current B41M5/20; measuring roughness or irregularity of surfaces G01B7/34; details of scanning-probe microscopes G01Q)} · CPC title

• H01L45/12

  Electricity · mapped topic

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G01N27/4146 Primary

  involving nanosized elements, e.g. nanotubes, nanowires · CPC title