Polycrystalline silicon carbide substrate with density gradient and method of manufacturing the same
US-2024332366-A1 · Oct 3, 2024 · US
directly from the solid state
directly from the solid state · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B28/02 |
| Official title | directly from the solid state |
| Display label | directly from the solid state |
| Total patents | 70 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 3 |
| 2017 | 8 |
| 2018 | 10 |
| 2019 | 5 |
| 2020 | 4 |
| 2021 | 6 |
| 2022 | 10 |
| 2023 | 8 |
| 2024 | 5 |
| 2025 | 9 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of depositing silicon film and film deposition apparatus
US-12080552-B2 · Sep 3, 2024 · US
Seeded solid-phase crystallization of transparent conducting vanadate perovskites
US-12074235-B2 · Aug 27, 2024 · US
SiC SUBSTRATE SiC COMPOSITE SUBSTRATE
US-2024186380-A1 · Jun 6, 2024 · US
Method for manufacturing sputtering target, method for forming oxide film, and transistor
US-11967505-B2 · Apr 23, 2024 · US
Calcium fluoride polycrystalline substance, production method of calcium fluoride particle, production method of calcium fluoride polycrystalline substance, optical element, optical system, interchangeable lens and optical device
US-2023333283-A1 · Oct 19, 2023 · US
Diamond polycrystal and method of producing the same
US-11787699-B2 · Oct 17, 2023 · US
Method for manufacturing sputtering target, method for forming oxide film, and transistor
US-2023260785-A1 · Aug 17, 2023 · US
Display device and manufacturing method thereof
US-11715739-B2 · Aug 1, 2023 · US
Method for manufacturing sputtering target, method for forming oxide film, and transistor
US-11637015-B2 · Apr 25, 2023 · US
Layered group III-V compound and nanosheet containing arsenic, and electrical device using the same
US-11634340-B2 · Apr 25, 2023 · US
Layered group III-V compound and nanosheet containing phosphorus, and electrical device using the same
US-11597651-B2 · Mar 7, 2023 · US
Scintillation material of rare earth orthosilicate doped with strong electron-affinitive element and its preparation method and application thereof
US-11567223-B2 · Jan 31, 2023 · US
Method of depositing silicon film and film deposition apparatus
US-2022319845-A1 · Oct 6, 2022 · US
Laser crystallization apparatus
US-2022212291-A1 · Jul 7, 2022 · US
Methods for producing a composition with a ferroelectric perovskite primary phase and a tunable secondary crystalline phase of relaxor-dielectric, associated compositions, and associated devices
US-2022170178-A1 · Jun 2, 2022 · US
Scintillation material of rare earth orthosilicate doped with strong electron-affinitive element and its preparation method and application thereof
US-2022155470-A1 · May 19, 2022 · US
Layered group iii-v compound and nanosheet containing phosphorus, and electrical device using the same
US-2022073351-A1 · Mar 10, 2022 · US
Display device and manufacturing method thereof
US-2022077261-A1 · Mar 10, 2022 · US
Layered group iii-v compound and nanosheet containing arsenic, and electrical device using the same
US-2022073365-A1 · Mar 10, 2022 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B28/02?
- CPC C30B28/02 is the Cooperative Patent Classification code for “directly from the solid state.”
- How many patents are filed under CPC C30B28/02 (directly from the solid state)?
- Our database includes 70 publications tagged with this CPC code.
- Is patent activity under CPC C30B28/02 growing?
- Publication counts under this code: 5 in 2024 vs 9 in 2025 (latest complete years).