Laser crystallization apparatus

Patent metadata

Field	Value
Publication number	US-2022212291-A1
Application number	US-202117503363-A
Country	US
Kind code	A1
Filing date	Oct 18, 2021
Priority date	Jan 5, 2021
Publication date	Jul 7, 2022
Grant date	—

Abstract

A laser crystallization apparatus according to an embodiment includes a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident, wherein the optical unit includes a first portion and a second portion bonded to each other on a bonded surface, and a first width of the first portion and a second width of the second portion are the same as each other on the bonded surface based on a direction parallel to the incident direction of the laser beam.

First claim

What is claimed is:

1 . A laser crystallization apparatus comprising:
a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident in an incident direction, wherein the optical unit includes a first portion and a second portion bonded to each other on a bonded surface, and wherein a first width of the first portion and a second width of the second portion are the same as each other on the bonded surface based on a direction parallel to the incident direction of the laser beam.

2 . The laser crystallization apparatus of claim 1 , wherein
based on a direction perpendicular to the incident direction of the laser beam, the first length of the first portion and the second length of the second portion are different from each other.

3 . The laser crystallization apparatus of claim 1 , wherein
the first portion and the second portion are bonded by optical contact bonding or welding.

4 . The laser crystallization apparatus of claim 1 , wherein
the bonded surface is parallel to the incident direction of the laser beam.

5 . The laser crystallization apparatus of claim 1 , wherein
the bonded surface is inclined to form a predetermined angle with the incident direction of the laser beam.

6 . The laser crystallization apparatus of claim 5 , wherein
based on a direction perpendicular to the incident direction of the laser beam, the width of the bonded surface is about 0.3% to about 0.6% of the length of the optical unit.

7 . The laser crystallization apparatus of claim 1 , wherein
the length of the optical unit is about 2000 mm to about 2500 mm based on the direction perpendicular to the incident direction of the laser beam.

8 . A laser crystallization apparatus comprising:
a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident in an incident direction and including a plurality of sub-optical units, wherein each of a plurality of sub-optical units includes a first portion and a second portion bonded to each other on a bonded surface, and wherein a plurality of sub-optical units are sequentially arranged based on a direction parallel to the incident direction of the laser beam.

9 . The laser crystallization apparatus of claim 8 , wherein
a plurality of sub-optical units include a first sub-optical unit and a second sub-optical unit, and the length of the first portion of the first sub-optical unit is different from the length of the first portion of the second sub-optical unit.

10 . The laser crystallization apparatus of claim 9 , wherein
the bonded surface of the first sub-optical unit and the bonded surface of the second sub-optical unit are disposed to offset each other in the direction parallel to the incident direction of the laser beam.

11 . The laser crystallization apparatus of claim 10 , wherein
based on the direction parallel to the incident direction of the laser beam, the first width of the first portion and the second width of the second portion are the same as each other on the bonded surface.

12 . The laser crystallization apparatus of claim 11 , wherein
the bonded surface of the first sub-optical unit and the bonded surface of the second sub-optical unit are parallel to the incident direction of the laser beam.

13 . The laser crystallization apparatus of claim 12 , wherein
a plurality of sub-optical units are disposed to be bonded along the incident direction of the laser beam.

14 . The laser crystallization apparatus of claim 12 , wherein
a plurality of sub-optical units are disposed to be separated from each other along the incident direction of the laser beam.

15 . The laser crystallization apparatus of claim 11 , wherein
the bonded surface of the first sub-optical unit and the bonded surface of the second sub-optical unit are inclined to form a predetermined angle with the incident direction of the laser beam.

16 . The laser crystallization apparatus of claim 15 , wherein
based on the direction perpendicular to the incident direction of the laser beam, the width of the bonded surface of the first sub-optical unit is about 0.3% to about 0.6% of the length of the first sub-optical unit.

17 . The laser crystallization apparatus of claim 16 , wherein
the length of the first sub-optical unit is about 2000 mm to about 2500 mm.

18 . The laser crystallization apparatus of claim 15 , wherein
a plurality of sub-optical units are disposed to be bonded along the incident direction of the laser beam.

19 . The laser crystallization apparatus of claim 15 , wherein
a plurality of sub-optical units are disposed to be separated from each other along the incident direction of the laser beam.

20 . A laser crystallization apparatus comprising:
a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident in an incident direction, wherein the optical unit includes a first portion and a second portion bonded to each other on a bonded surface, and the bonded surface is inclined to form a predetermined angle with the incident direction of the laser beam.

Assignees

• Samsung Display Co Ltd

Inventors

• Sangu Akifumi
• Ryu Je Kil
• Park Cheol Ho
• Lee Hae Sook
• Jeun Jin Hong
• Chae Young Su
• Han Gyoo Wan

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• C30B30/00

  Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions · CPC title

• C30B28/02 Primary

  directly from the solid state · CPC title

• C01B33/021

  Preparation (chemical coating from the vapour phase C23C16/00) · CPC title

• C30B29/06

  Silicon · CPC title