Seeded solid-phase crystallization of transparent conducting vanadate perovskites

Patent metadata

Field	Value
Publication number	US-12074235-B2
Application number	US-202017015428-A
Country	US
Kind code	B2
Filing date	Sep 9, 2020
Priority date	Sep 11, 2019
Publication date	Aug 27, 2024
Grant date	Aug 27, 2024

Abstract

Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.

First claim

What is claimed is:

1. A method of forming a polycrystalline vanadate perovskite film, the method comprising:
forming a plurality of nanoscale crystalline perovskite oxide seeds on a substrate;
depositing a layer of amorphous vanadate perovskite precursor over the nanoscale crystalline perovskite oxide seeds; and
heating the layer of amorphous vanadate perovskite precursor, whereby the layer of amorphous vanadate perovskite precursor is laterally crystallized from the nanoscale crystalline perovskite oxide seeds to form the polycrystalline vanadate perovskite film.

2. The method of claim 1 , wherein the polycrystalline vanadate perovskite film comprises SrVO 3 , CaVO 3 , La x Sr 1-x VO 3 , where x is in the range from 0 to 0.5, or a mixture of two or more thereof.

3. The method of claim 1 , wherein the polycrystalline vanadate perovskite film is an SrVO 3 film.

4. The method of claim 1 , wherein the polycrystalline vanadate perovskite film is a CaVO 3 film.

5. The method of claim 1 , wherein the polycrystalline vanadate perovskite film is an La x Sr 1-x VO 3 film, where x is in the range from 0 to 0.5.

6. The method of claim 1 , wherein heating the layer of amorphous vanadate perovskite precursor comprises heating the layer of amorphous vanadate perovskite precursor to a temperature lower than 500° C., and further wherein the polycrystalline vanadate perovskite film comprises crystal grains having lateral dimensions of at least 1 μm.

7. The method of claim 6 , wherein the temperature is lower than 450° C. and the polycrystalline vanadate perovskite film comprises crystal grains having lateral dimensions of at least 2 μm.

8. The method of claim 1 , wherein the polycrystalline vanadate perovskite film is formed in an oxygen-containing environment and the vanadium in the as-crystallized polycrystalline vanadate perovskite film has an initial oxidation state, and further wherein the method further comprises reducing the oxidation state of the vanadium in the as-crystallized polycrystalline vanadate perovskite film to a final oxidation state.

9. The method of claim 1 , wherein the polycrystalline vanadate perovskite film is formed in a non-oxidizing environment and the vanadium in the as-crystallized polycrystalline perovskite film is formed in a final oxidation state.

10. A method of forming a polycrystalline perovskite oxide film, the method comprising:
forming a layer of amorphous perovskite oxide precursor on a substrate;
subsequently embedding one or more nanoscale crystalline perovskite oxide seeds into a surface of the layer of amorphous perovskite oxide precursor; and
heating the layer of amorphous perovskite oxide precursor to a temperature that favors lateral perovskite oxide crystal growth at the one or more nanoscale crystalline perovskite oxide seeds over homogeneous perovskite oxide crystal nucleation within the layer of amorphous perovskite oxide precursor, whereby the layer of amorphous perovskite oxide precursor is laterally crystallized from the one or more nanoscale crystalline perovskite oxide seeds to form the polycrystalline perovskite oxide film.

11. The method of claim 10 , wherein the polycrystalline vanadate perovskite film is formed in an oxygen-containing environment and the vanadium in the as-crystallized polycrystalline vanadate perovskite film has an initial oxidation state, and further wherein the method further comprises reducing the oxidation state of the vanadium in the polycrystalline vanadate perovskite film to a final oxidation state.

12. The method of claim 10 , wherein the polycrystalline vanadate perovskite film is formed in a non-oxidizing environment and the vanadium in the as-crystallized polycrystalline perovskite film is formed in a final oxidation state.

13. The method of claim 10 , wherein the one or more nanoscale crystalline perovskite oxide seeds have beveled edges at their distal ends, and further wherein embedding the one or more nanoscale crystalline perovskite oxide seeds into the surface of the layer of amorphous perovskite oxide precursor comprises mechanically pressing the one or more nanoscale crystalline perovskite oxide seeds into the layer of amorphous perovskite oxide precursor.

Assignees

• Wisconsin Alumni Res Found

Inventors

• Evans Paul Gregory
• Kuech Thomas Francis
• Savage Donald E
• Chen Yajin
• Marks Samuel

Classifications

• H10F30/301

  the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation · CPC title

• H10F77/40 Primary

  Optical elements or arrangements (surface textures H10F77/70) · CPC title

• H10F77/244 Primary

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• C30B29/30

  Niobates; Vanadates; Tantalates · CPC title

• C30B28/02

  directly from the solid state · CPC title