Method for manufacturing sputtering target, method for forming oxide film, and transistor

Patent metadata

Field	Value
Publication number	US-11637015-B2
Application number	US-202117491637-A
Country	US
Kind code	B2
Filing date	Oct 1, 2021
Priority date	Feb 28, 2013
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first oxide film by using a first sputtering target comprising In, Ga and Zn;
forming a second oxide film by using a second sputtering target comprising In, Ga and Zn over the first oxide film; and
forming a source electrode and a drain electrode electrically connected to the first oxide film and the second oxide film,
wherein the second oxide film has a larger atomic ratio of Ga to In than the first oxide film, and
wherein an atomic ratio of metal elements of the second sputtering target satisfies Ga>In and Zn>Ga.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein an atomic ratio of metal elements of the first sputtering target satisfies In:Ga:Zn=1:1:1.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein a c-axis of the second oxide film is aligned in a direction parallel to a normal vector of a surface where the second oxide film is formed or a top surface of the second oxide film.

4. The method for manufacturing a semiconductor device according to claim 1 ,
wherein a direction of an a-axis of a first region of the second oxide film is different from a direction of an a-axis of a second region of the second oxide film, and
wherein a direction of a b-axis of the first region of the second oxide film is different from a direction of a b-axis of the second region of the second oxide film.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein an electron diffraction pattern of the second oxide film shows a plurality of bright spots.

6. The method for manufacturing a semiconductor device according to claim 1 ,
wherein an atomic ratio of Ga to In and an atomic ratio of Zn to In in the first oxide film are lower than those in the first sputtering target, and
wherein an atomic ratio of Ga to In and an atomic ratio of Zn to In in the second oxide film are lower than those in the second sputtering target.

7. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a first oxide film by using a first sputtering target comprising In, M 1 and Zn, so as to overlap the gate electrode;
forming a second oxide film by using a second sputtering target comprising In, M 2 and Zn over the first oxide film; and
forming a source electrode and a drain electrode electrically connected to the first oxide film and the second oxide film,
wherein M 1 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein M 2 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein a first atomic ratio of M 2 to In in the second oxide film is larger than a second atomic ratio of M 1 to In in the first oxide film, and
wherein an atomic ratio of metal elements of the second sputtering target satisfies M 2 >In and Zn >M 2 .

8. The method for manufacturing a semiconductor device according to claim 7 , wherein an atomic ratio of metal elements of the first sputtering target satisfies In:M 1 :Zn=1:1:1.

9. The method for manufacturing a semiconductor device according to claim 7 , wherein a c-axis of the second oxide film is aligned in a direction parallel to a normal vector of a surface where the second oxide film is formed or a top surface of the second oxide film.

10. The method for manufacturing a semiconductor device according to claim 7 ,
wherein a direction of an a-axis of a first region of the second oxide film is different from a direction of an a-axis of a second region of the second oxide film, and
wherein a direction of a b-axis of the first region of the second oxide film is different from a direction of a b-axis of the second region of the second oxide film.

11. The method for manufacturing a semiconductor device according to claim 7 , wherein an electron diffraction pattern of the second oxide film shows a plurality of bright spots.

12. The method for manufacturing a semiconductor device according to claim 7 ,
wherein an atomic ratio of M 1 to In and an atomic ratio of Zn to In in the first oxide film are lower than those in the first sputtering target, and
wherein an atomic ratio of M 1 to In and an atomic ratio of Zn to In in the second oxide film are lower than those in the second sputtering target.

13. The method for manufacturing a semiconductor device according to claim 7 ,
wherein the second oxide film comprises crystals aligned in a c-axis direction, and
wherein a size of the crystals of the second oxide film is greater than or equal to 1 nm and less than or equal to 100 nm.

14. The method for manufacturing a semiconductor device according to claim 7 , wherein the gate electrode is formed before the step of forming the first oxide film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Tsubuku Masashi
• Oota Masashi
• Kurosawa Yoichi
• Ishihara Noritaka

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22 Primary

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title