Layered group III-V compound and nanosheet containing arsenic, and electrical device using the same

Patent metadata

Field	Value
Publication number	US-11634340-B2
Application number	US-202017111153-A
Country	US
Kind code	B2
Filing date	Dec 3, 2020
Priority date	Sep 9, 2020
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

First claim

What is claimed is:

1. A layered compound having a composition represented by Formula 1 below:
M x-m A y As z   [Formula 1]

wherein M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance, and wherein the m is greater than 0 and satisfies 0.1≤m≤0.9×.

2. The layered compound according to claim 1 ,
wherein the m satisfies 0.25×≤m≤0.75×.

3. The layered compound according to claim 1 ,
wherein the M is Na, K or a combination thereof.

4. The layered compound according to claim 1 ,
wherein the A is Ga, In or a combination thereof.

5. The layered compound according to claim 1 ,
wherein the layered compound further comprises H.

6. The layered compound according to claim 1 ,
wherein the crystal structure of the layered compound exhibits a space group of P2 1/c .

7. The layered compound according to claim 1 ,
wherein the layered compound exhibits ferroelectric-like properties.

8. The layered compound according to claim 1 ,
wherein the layered compound exhibits resistance switching properties.

9. A nanosheet comprising a composition represented by Formula 1 below and two or more two-dimensional layers, the nanosheet being prepared through a physical or chemical peeling method:
M x-m A y As z   [Formula 1]

wherein M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance, and wherein the m is greater than 0 and satisfies 0.1×≤m≤0.9×.

10. The nanosheet according to claim 9 ,
wherein the m satisfies 0.25×≤m≤0.75×.

11. The nanosheet according to claim wherein the M is Na, K or a combination thereof.

12. The nanosheet according to claim 9 ,
wherein the A is Ga, In or a combination thereof.

13. The nanosheet according to claim 9 ,
wherein the nanosheet further comprises H.

14. The nanosheet according to claim 9 ,
wherein the crystal structure of the nanosheet has a space group of P2 1/c .

15. The nanosheet according to claim 9 ,
wherein the nanosheet exhibits ferroelectric-like properties.

16. The nanosheet according to claim 9 ,
wherein the nanosheet exhibits resistance switching properties.

17. An electrical device comprising the layered compound according to claim 1 .

Assignees

• Univ Yonsei Iacf

Inventors

• Shim Woo-Young
• Choi Sang-Jin
• Kim Tae-Young

Classifications

• C30B29/64

  Flat crystals, e.g. plates, strips or discs · CPC title

• C30B28/02

  directly from the solid state · CPC title

• C01P2002/20

  Two-dimensional structures · CPC title

• C30B29/10

  Inorganic compounds or compositions · CPC title

• C30B29/42

  Gallium arsenide · CPC title