Method of depositing silicon film and film deposition apparatus

Patent metadata

Field	Value
Publication number	US-12080552-B2
Application number	US-202217654628-A
Country	US
Kind code	B2
Filing date	Mar 14, 2022
Priority date	Apr 6, 2021
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

First claim

What is claimed is:

1. A method of depositing a silicon film, the method comprising:
supplying a silicon-containing gas on a seed layer;
depositing an amorphous silicon film on the seed layer, wherein the amorphous silicon film is deposited at a first temperature;
supplying chlorosilane gas to the amorphous silicon film;
crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film, wherein the chlorosilane cap layer is formed at a second temperature higher than the first temperature; and
annealing the chlorosilane cap layer and the amorphous silicon film at a third temperature higher than the second temperature.

2. The method of depositing a silicon film according to claim 1 ,
wherein the first temperature is less than 540° C., and
wherein the second temperature is 500° C. or higher and 700° C. or lower.

3. The method of depositing a silicon film according to claim 2 ,
wherein the first temperature is 450° C. or higher and 500° C. or lower, and
wherein the second temperature is 560° C. or higher and 580° ° C. or lower.

4. The method of depositing a silicon film according to claim 1 ,
wherein the silicon-containing gas is monosilane or disilane, and
wherein the chlorosilane gas is dichlorosilane.

Assignees

• Tokyo Electron Ltd

Inventors

• Miyahara Tatsuya
• Takezawa Yoshihiro
• Suzuki Daisuke
• Hayashi Hiroyuki

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3802 Primary

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3248

  consisting of two layers · CPC title