Diamond polycrystal and method of producing the same

US11787699B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11787699-B2
Application numberUS-201816763361-A
CountryUS
Kind codeB2
Filing dateNov 13, 2018
Priority dateNov 17, 2017
Publication dateOct 17, 2023
Grant dateOct 17, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A diamond polycrystal is a diamond polycrystal basically composed of a diamond single phase, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, and the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm.

First claim

Opening claim text (preview).

The invention claimed is: 1. A diamond polycrystal comprising more than or equal to 99% by volume of a diamond component, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm, wherein the carbon dangling bond density is a value indicating a ratio of the number of unbonding hands of carbon atoms relative to the total number of bonding hands of carbon atoms forming the diamond grain, and a surface of the diamond polycrystal is composed of the diamond grains, the diamond grains having an aspect ratio of less than or equal to 3. 2. The diamond polycrystal according to claim 1 , wherein the diamond polycrystal includes at least one element selected from the group consisting of hydrogen, oxygen and nitrogen as an impurity, and each of concentrations of the hydrogen, the oxygen and the nitrogen in the diamond polycrystal is less than or equal to 1 ppm. 3. The diamond polycrystal according to claim 1 , wherein the concentration of the nitrogen in the diamond polycrystal is less than 0.1 ppm. 4. The diamond polycrystal according to claim 1 , wherein a crack generation load is more than or equal to 10 N in a breaking strength test in which a spherical diamond indenter having a tip radius of 50 μm is pressed against a surface of the diamond polycrystal at a load rate of 1 N/second.

Assignees

Inventors

Classifications

  • Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance · CPC title

  • Pressure sintering · CPC title

  • Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites · CPC title

  • Cubic symmetry, e.g. beta-SiC · CPC title

  • Graphite · CPC title

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What does patent US11787699B2 cover?
A diamond polycrystal is a diamond polycrystal basically composed of a diamond single phase, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, and the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm.
Who is the assignee on this patent?
Sumitomo Electric Industries
What technology area does this patent fall under?
Primary CPC classification C01B32/26. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 17 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).