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Method for manufacturing sputtering target, method for forming oxide film, and transistor
US2023260785A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023260785-A1 |
| Application number | US-202318137572-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 21, 2023 |
| Priority date | Feb 28, 2013 |
| Publication date | Aug 17, 2023 |
| Grant date | — |
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Abstract
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A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method for manufacturing a sputtering target, comprising the steps of: forming a polycrystalline In-M-Zn oxide powder from a homologous compound of an In-M-Zn oxide, M representing a metal selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
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Classifications
Crystal orientation · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
- H10P14/22Primary
using physical deposition, e.g. vacuum deposition or sputtering · CPC title
Subject matter not provided for in other groups of this subclass · CPC title
Orientations of crystalline planes · CPC title
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- What does patent US2023260785A1 cover?
- A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among alum…
- Who is the assignee on this patent?
- Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H10P14/22. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 17 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).