Electric device for detecting pressure
US-10488287-B2 · Nov 26, 2019 · US
Sensors and method of operating sensor
US9660169B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9660169-B2 |
| Application number | US-201114345410-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 22, 2011 |
| Priority date | Sep 22, 2011 |
| Publication date | May 23, 2017 |
| Grant date | May 23, 2017 |
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- Title
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Abstract
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Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.
First claim
Opening claim text (preview).
What is claimed: 1. A strain sensitive diode, comprising: a number of group III-nitride strain sensitive diode devices; and a number of passive electrical components, wherein each one of the passive electrical components is connected to a different one of the number of group III-nitride strain sensitive diode devices. 2. The strain sensitive diode of claim 1 , wherein the strain sensitive diode is a passive contactless sensor. 3. The strain sensitive diode of claim 1 , wherein the passive electrical component is an inductor coil. 4. The strain sensitive diode of claim 1 , wherein the passive electrical component includes an antenna. 5. The strain sensitive diode of claim 1 , wherein the passive electrical components are on-chip integrated. 6. The strain sensitive diode of claim 1 , wherein the number of group III-nitride strain sensitive diode devices is constructed at least in part from at least one material selected from the group of materials including: GaN, AIN, InN, and their ternary and quaternary alloys. 7. The strain sensitive diode of claim 1 , wherein the number of group III-nitride strain sensitive diode devices includes one of: a Schottky diode, a metal-isolator-semiconductor (MIS) structure, and an MIS heterostructure. 8. The strain sensitive diode of claim 1 , wherein the number of group III-nitride strain sensitive diode devices includes one of: a P-N diode, a PIN diode, a light-emitting diode (LED), and a laser diode. 9. The strain sensitive diode of claim 1 , wherein the number of group III-nitride strain sensitive diode devices are formed on a flexible foil. 10. The strain sensitive diode of claim 1 , wherein the strain sensitive diode includes a reference cavity for use in measuring pressure.
Assignees
Inventors
Classifications
Electricity · mapped topic
using properties of piezoelectric devices · CPC title
using piezoelectric devices (piezoelectric resonators G01L9/0022; surface acoustic waves G01L9/0025) · CPC title
Electricity · mapped topic
using variations in capacitance · CPC title
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Frequently asked questions
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- What does patent US9660169B2 cover?
- Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.
- Who is the assignee on this patent?
- Dumitru Viorel G, Georgescu Ion, Costea Stefan D, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G01L9/0098. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 23 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).