Vertically stacked heterostructures including graphene
US-2015318401-A1 · Nov 5, 2015 · US
Pressure sensing device having Dirac material and method of operating the same
US9976918B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9976918-B2 |
| Application number | US-201615192466-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2016 |
| Priority date | Jun 25, 2015 |
| Publication date | May 22, 2018 |
| Grant date | May 22, 2018 |
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Abstract
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A pressure sensing device having a Dirac material and a method of operating the same are provided. The pressure sensing device includes a Dirac material pattern disposed on a substrate and having a band structure in which Dirac cones meet at a Dirac point. A source electrode and a drain electrode are respectively connected to the Dirac material pattern. A spacer layer including a cavity on the Dirac material pattern is disposed on the substrate. A gate electrode overlapping the Dirac material pattern is disposed on the cavity.
First claim
Opening claim text (preview).
What is claimed is: 1. A pressure sensing device comprising: a Dirac material pattern on a substrate and having a band structure in which Dirac cones meet at a Dirac point; a source electrode and a drain electrode respectively connected to opposite ends of the Dirac material pattern; a spacer layer on the substrate and provided with a cavity on the Dirac material pattern; and a gate electrode on the cavity and overlapping with the Dirac material pattern wherein the number of electric charges (n 0 ) due to impurities of the Dirac material pattern is in the range that satisfies any one of Expressions 6a and 6b below: C t 1 V G Aq < n 0 < C t 2 V G Aq ( here , both V G and n 0 are positive values ) [ Expression 6 a ] C t 1 V G Aq > n 0 > C t 2 V G Aq ( here , both V G and n 0 are negative values ) [ Expression 6 b ] in the above Expressions 6a and 6b, C t 1 is capacitance between the gate electrode and the Dirac material pattern when a minimum pressure is applied to the gate electrode, C t 2 is capacitance between the gate electrode and the Dirac material pattern when a maximum pressure is applied to the gate electrode, V G is a voltage applied to the gate electrode, A is an area of the capacitor formed between the gate electrode and the Dirac material pattern, and q is a unit electric charge amount. 2. The pressure sensing device of claim 1 , wh
Assignees
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of the semi-conductor type · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
using semiconductive material, e.g. silicon · CPC title
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- What does patent US9976918B2 cover?
- A pressure sensing device having a Dirac material and a method of operating the same are provided. The pressure sensing device includes a Dirac material pattern disposed on a substrate and having a band structure in which Dirac cones meet at a Dirac point. A source electrode and a drain electrode are respectively connected to the Dirac material pattern. A spacer layer including a cavity on the …
- Who is the assignee on this patent?
- Industriy Univ Cooperation Foundation Hanyang Univ, Univ Hanyang Ind Univ Coop Found
- What technology area does this patent fall under?
- Primary CPC classification G01L1/005. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 22 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).