Flexible bimodal sensor

Patent metadata

Field	Value
Publication number	US-10374074-B2
Application number	US-201615200293-A
Country	US
Kind code	B2
Filing date	Jul 1, 2016
Priority date	Jul 2, 2015
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.

First claim

What is claimed is:

1. A flexible bimodal sensor comprising:
a gate electrode;
a flexible substrate;
a source electrode disposed on the flexible substrate;
a drain electrode disposed on the flexible substrate apart from the source electrode;
a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and
a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode and,
wherein the drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor, and
the gate insulating layer comprises a base having a predetermined thickness and the plurality of protrusions extends from a first surface of the base towards the channel layer.

2. The flexible bimodal sensor of claim 1 , wherein the channel layer comprises one of silicon, an organic semiconductor, and a semiconductor oxide.

3. The flexible bimodal sensor of claim 2 , further comprising an encapsulating layer that covers the channel layer and is disposed between the channel layer and the gate insulating layer.

4. The flexible bimodal sensor of claim 3 , wherein the encapsulating layer comprises one of an organic material comprising tetratetracontane (TTC) or methylcycloheane (MCH), an inorganic oxide comprising Al 2 O 3 or HfO 2 , and a stack structure in which the organic material and the inorganic oxide are stacked.

5. The flexible bimodal sensor of claim 1 , wherein the plurality of protrusions further comprise a plurality of first protrusions formed on a second surface of the base facing the first surface of the base.

6. The flexible bimodal sensor of claim 4 , wherein the gate insulating layer comprises a first material selected from the group consisting of P(VDF_TrFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CtFE), polydimethylsiloxane (PDMS), and polyurethane (PU).

7. The flexible bimodal sensor of claim 6 , wherein the gate insulating layer further comprises inorganic nano-particles distributed in the first material.

8. The flexible bimodal sensor of claim 1 , wherein the plurality of protrusions of the gate insulating layer has a pyramid shape or a truncated pyramid shape.

9. The flexible bimodal sensor of claim 1 , wherein the flexible bimodal sensor includes a plurality of bimodal sensors arranged in a matrix shape on the flexible substrate.

10. A flexible bimodal sensor comprising:
a flexible substrate;
a gate electrode disposed on the flexible substrate;
a gate insulating layer covering the gate electrode on the flexible substrate;
a channel layer disposed on the gate insulating layer; and
a source electrode disposed on the channel layer; and
a drain electrode disposed on the channel layer apart from the source electrode;
wherein the gate insulating layer comprises a plurality of protrusions, and
wherein the drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value measured by the flexible bimodal sensor, and
the gate insulating layer comprises a base having a predetermined thickness and the plurality of protrusions extends from a first surface of the base towards the channel layer.

11. The flexible bimodal sensor of claim 10 , wherein the channel layer comprises silicon, an organic semiconductor, or a semiconductor oxide.

12. The flexible bimodal sensor of claim 11 , further comprising an encapsulating layer that covers the channel layer, the drain electrode, and the source electrode.

13. The flexible bimodal sensor of claim 12 , wherein the encapsulating layer comprises one an organic material comprising tetratetracontane (TTC) or methylcycloheane (MCH), an inorganic oxide comprising Al 2 O 3 or HfO 2 , and a stack structure in which the organic material and the inorganic oxide are stacked.

14. The flexible bimodal sensor of claim 10 , wherein the plurality of protrusions further comprise a plurality of protrusions on a second surface of the base facing the first surface of the base.

15. The flexible bimodal sensor of claim 13 , wherein the gate insulating layer comprises a first material selected from the group consisting of P(VDF_TrFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CtFE), polydimethylsiloxane (PDMS), and polyurethane (PU).

16. The flexible bimodal sensor of claim 15 , wherein the gate insulating layer further comprises inorganic nano-particles distributed in the first material.

17. The flexible bimodal sensor of claim 10 , wherein the plurality of protrusions of the gate insulating layer has a pyramid shape or a truncated pyramid shape.

18. The flexible bimodal sensor of claim 10 , wherein the flexible bimodal sensor includes a plurality of bimodal sensors arranged in a matrix type on the flexible substrate.

Assignees

• Samsung Electronics Co Ltd
• Research & Business Found Sungkyunkwan Univ

Inventors

• Bae Jihyun
• Lee Nae-Eung
• Kim Doil
• Nguyen Thanh Tien
• Lee Sunghoon
• Jeon Sanghun

Classifications

• A61B5/02108

  from analysis of pulse wave characteristics · CPC title

• A61B2562/046

  in a matrix array · CPC title

• A61B2562/028

  Microscale sensors, e.g. electromechanical sensors [MEMS] · CPC title

• A61B5/02444

  Details of sensor (A61B5/02427 takes precedence) · CPC title

• A61B2562/0247

  Pressure sensors · CPC title