Methods and apparatus for substrate warpage correction

Patent metadata

Field	Value
Publication number	US-2021035795-A1
Application number	US-202016936918-A
Country	US
Kind code	A1
Filing date	Jul 23, 2020
Priority date	Jul 30, 2019
Publication date	Feb 4, 2021
Grant date	—

Abstract

Methods and apparatus for reducing warpage of a substrate. In some embodiments, a method of reducing substrate warpage comprises heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; maintaining the at least the glass transition temperature of the substrate until the substrate is constrained; constraining the substrate with a total clamping force of approximately 5000N to approximately 7000N exerted towards the substrate from a top direction and a bottom direction; applying at least one electrostatic field to the substrate with a first electrostatic chuck positioned above the substrate and a second electrostatic chuck positioned below the substrate; and rapidly cooling the substrate using a first liquid convection heat sink positioned above the substrate and a second liquid convection heat sink positioned below the substrate.

First claim

1 . A method for reducing warpage of a substrate, comprising:
heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; constraining the substrate with a clamping force exerted towards the substrate from a top direction and a bottom direction; applying at least one electrostatic field to the substrate; and rapidly cooling the substrate.

2 . The method of claim 1 , further comprising:
maintaining the at least the glass transition temperature of the substrate until the substrate is constrained.

3 . The method of claim 1 , further comprising:
constraining the substrate with a clamping force of approximately 5000N to approximately 7000N.

4 . The method of claim 1 , further comprising:
generating the electrostatic field with a first electrostatic chuck positioned above the substrate and a second electrostatic chuck positioned below the substrate.

5 . The method of claim 1 , further comprising:
using at least one liquid convection heat sink to rapidly quench cool the substrate at a rate of approximately 1300 W/m 2 ° C. to approximately 3100 W/m 2 ° C. to retain an elongated and low stress state of the epoxy layer.

6 . The method of claim 5 , further comprising:
using a first liquid convection heat sink positioned above the substrate and a second liquid convection heat sink positioned below the substrate.

7 . The method of claim 1 , further comprising:
generating at least one electrostatic field with at least one electrostatic chuck with two embedded half-moon electrodes.

8 . The method of claim 1 , further comprising:
heating the substrate to a glass transition temperature of approximately 100 degrees Celsius to approximately 200 degrees Celsius.

9 . The method of claim 1 , further comprising:
applying at least one electrostatic field with a positive or negative voltage of approximately 500 volts to approximately 2000 volts.

10 . The method of claim 1 , further comprising:
heating the substrate with a gas at a temperature of approximately 200 degrees Celsius to approximately 300 degrees Celsius and a pressure of approximately 1 bar to approximately 2 bar.

11 . The method of claim 1 , further comprising:
concurrently constraining the substrate, cooling the substrate, and applying the electrostatic field to the substrate for approximately 30 seconds to approximately 300 seconds.

12 . A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method of reducing warpage of a substrate to be performed, the method comprising:
heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; maintaining the at least the glass transition temperature of the substrate until the substrate is constrained; constraining the substrate with a total clamping force of approximately 5000N to approximately 7000N exerted towards the substrate from a top direction and a bottom direction; applying at least one electrostatic field to the substrate with a first electrostatic chuck positioned above the substrate and a second electrostatic chuck positioned below the substrate; and rapidly cooling the substrate using a first liquid convection heat sink positioned above the substrate and a second liquid convection heat sink positioned below the substrate.

13 . The non-transitory, computer readable medium of claim 12 , further comprising:
heating the substrate to a glass transition temperature of approximately 100 degrees Celsius to approximately 200 degrees Celsius.

14 . The non-transitory, computer readable medium of claim 12 , further comprising:
applying at least one electrostatic field with a voltage of approximately 500 volts to approximately 2000 volts.

15 . The non-transitory, computer readable medium of claim 12 , further comprising:
concurrently constraining the substrate, cooling the substrate, and applying the electrostatic field to the substrate for approximately 30 seconds to approximately 300 seconds.

16 . An apparatus for reducing warpage of a substrate with an epoxy layer, comprising:
a first station with a gas heating system and a transferable pedestal that holds the substrate, wherein the first station is configured to heat the substrate to at least a glass transition temperature of the epoxy layer; and a second station with a first warpage control assembly configured to receive the substrate from the first station, to provide a clamping force to a bottom surface of the substrate, to provide an electrostatic field to the substrate, and to provide cooling to the substrate, and a second warpage control assembly located above the first warpage control assembly configured to provide a clamping force to a top surface of the substrate, to provide an electrostatic field to the substrate, and to provide cooling to the substrate, wherein the first station and the second station are configured to transfer the substrate between the first station and the second station with the transferable pedestal while maintaining the at least the glass transition temperature of the substrate.

17 . The apparatus of claim 16 , wherein the first warpage control assembly has a lift pin assembly for raising and lowering the substrate on and off of an upper surface of the first warpage control assembly.

18 . The apparatus of claim 16 , the first station further comprising:
a gas distribution assembly located at a top of the first station; and a conduction heater assembly positioned under the transferable pedestal, wherein the first station is configured to heat the substrate with a heated gas supplied by the gas distribution assembly from above the substrate and to heat the substrate with the conduction heater assembly from below the substrate.

19 . The apparatus of claim 16 , the first station further comprising:
infrared heat detectors located at a bottom of the first station and configured to detect a temperature of a bottom surface of the substrate, wherein the transferable pedestal has openings that permit direct readings from the bottom surface of the substrate by the infrared heat detectors.

20 . The apparatus of claim 16 , the second station further comprising:
an annular gas distribution assembly is positioned at a top of the second station and outward of the second warpage control assembly, wherein the annular gas distribution assembly is configured to surround the substrate with heated gas to maintain the at least the glass transition temperature of the substrate; a first liquid convection cooling assembly configured to rapidly cool a bottom surface of the substrate, wherein the first liquid convection cooling assembly is formed of aluminum material with vacuum brazed cooling channels; a second liquid convection cooling assembly configured to rapidly cool a top surface of the substrate concurrently with the first liquid convection cooling assembly, wherein the second liquid convection cooling assembly is formed of aluminum material with vacuum brazed cooling channels; a first electrostatic chuck assembly configured to apply a first electrostatic field of approximately 500 volts to approximately 2000 volts below the substrate, wherein the first electrostatic chuck assembly is formed of aluminum nitride material with at least two electrodes configured to provide the first electrostatic field; and a second electrostatic chuck assembly configured to apply a second electr

Assignees

• Applied Materials Inc

Inventors

• Peng Qi Jie
• Lianto Prayudi
• Tan Chin Wei
• Thirunavukarasu Sriskantharajah
• Sundarrajan Arvind
• Su Jun-Liang
• Lim Fang Jie
• Arunakiri Manorajh
• Teo Wei Jie Dickson
• Parathithasan Karrthik
• Tan Puay Han

Classifications

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H10P90/18 Primary

  by shaping · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title