Polishing apparatus
US-2015352682-A1 · Dec 10, 2015 · US
US2016297048A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016297048-A1 |
| Application number | US-201615188638-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 21, 2016 |
| Priority date | Jan 30, 2013 |
| Publication date | Oct 13, 2016 |
| Grant date | — |
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Official abstract text for this publication.
An apparatus and method of polishing a substrate is described. The polishing includes: rotating a substrate; pressing a first polishing tool against an edge portion of the substrate to polish the edge portion; and pressing a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface rougher than a polishing surface of the second polishing tool.
Opening claim text (preview).
What is claimed is: 1 . A substrate polishing apparatus, comprising: a substrate holder configured to rotate the substrate; a first polishing tool configured to press against an edge portion of the substrate to polish the edge portion; and a second polishing tool configured to press against the edge portion of the substrate to polish the edge portion, the second polishing tool being located more inwardly than the first polishing tool with respect to a radial direction of the substrate, the first polishing tool having a polishing surface more abrasive than a polishing surface of the second polishing tool. 2 . The substrate polishing apparatus according to claim 1 , further comprising: the second polishing tool configured for contact with the edge portion of the substrate after a predetermined time has elapsed from a time when the first polishing tool is configured for contact with the edge portion of the substrate. 3 . The substrate polishing apparatus according to claim 1 , wherein a contact width of the first polishing tool is equal to or larger than a contact width of the second polishing tool while contacting the edge portion of the substrate. 4 . The substrate polishing apparatus according to claim 1 , wherein the first polishing tool is configured for a removal rate of the substrate that is higher than a removal rate of the substrate by the second polishing tool. 5 . The substrate polishing apparatus according to claim 1 , wherein the first polishing tool is configured as a polishing tool for rough-polishing of the substrate, and the second polishing tool is configured as a polishing tool for finish-polishing of the substrate. 6 . The substrate polishing apparatus according to claim 1 , wherein at least one of the first polishing tool and the second polishing tool comprises a polishing tape. 7 . The substrate polishing apparatus according to claim 1 , wherein at least one of the first polishing tool and the second polishing tool comprises a grindstone.
Mechanical treatments, e.g. by ultrasounds · CPC title
by shaping · CPC title
Cutting or separating of wafers, substrates or parts of devices · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
of thin, brittle parts, e.g. semiconductors, wafers · CPC title
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