Manufacturing a package using plateable encapsulant

Patent metadata

Field	Value
Publication number	US-2019341324-A1
Application number	US-201916514853-A
Country	US
Kind code	A1
Filing date	Jul 17, 2019
Priority date	Mar 3, 2016
Publication date	Nov 7, 2019
Grant date	—

Abstract

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

First claim

What is claimed is:

1 . A method of manufacturing a package, the method comprising:
embedding a semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

2 . The Method according to claim 1 , further comprising
electrically coupling of a redistribution layer with the semiconductor chip.

3 . The Method according to claim 2 ,
wherein the redistribution layer and the semiconductor chip are electrically coupled for providing an electrical conductive coupling to the redistribution layer and an electronic periphery, that is at least partially localized at an surface of the package.

4 . The Method according to claim 1 ,
wherein the encapsulant is a mold compound.

5 . The Method according to claim 1 ,
wherein the plating comprises a plating of an outer lateral sidewall of the converted part of the encapsulant with an electrically conductive material.

6 . The Method according to claim 1 ,
wherein the sidewall of the encapsulant is exposed before the plating, in particular is exposed by sawing, while the encapsulant of the package is arranged on a temporary carrier.

7 . The Method according to claim 1 ,
wherein the selectively converting of a part of the transition metal comprises a laser treatment.

8 . The Method according to claim 1 ,
wherein the selectively converting of a part of the transition metal comprises a chemical reduction.

9 . The Method according to claim 1 ,
wherein the plating is an electroless plating.

10 . The Method according to claim 1 ,
wherein the transition metal is selected from one of the group consisting of palladium, nickel and copper.

11 . The Method according to claim 1 ,
wherein the semiconductor chip is a power semiconductor chip.

12 . The Method according to claim 1 ,
wherein the external periphery comprises a at least one of a printed circuit board, an antenna structure, a wiring connections for such an antenna structure, an EMI shielding structures and a passive component.

13 . The Method according to claim 1 ,
coupling a complexing agent to the transition metal, in particular configured to enhance a chemical stearic effect to maintain an electrically insulating behaviour of the transition metal in a bulk mold compound.

14 . The Method according to claim 1 , wherein the encapsulant comprises a polymer cluster and a coupling agent between the transition metal and the polymer cluster.

15 . The Method according to claim 14 ,
wherein the polymer cluster comprises at least one material of a group consisting of a wax, an adhesion promoter, a mold compound catalyst, and a coupling agent for silica.

16 . The Method according to claim 14 ,
wherein the polymer cluster comprises at least one rest, in particular at least one of a hydrophobic group, and a hydrophilic group.

17 . The Method according to claim 14 , the method further comprising
removing a surface portion of the polymer cluster to thereby expose the transition metal;
activating the exposed transition metal.

18 . A package, comprising:
at least one semiconductor chip; and an encapsulant in which the semiconductor chip is embedded;
wherein the encapsulant comprises a transition metal in a concentration in a range between 10 ppm and 10,000 ppm,
wherein a part of the transition metal is selectively converted, such that the electrical conductivity of the encapsulant is increased,
wherein the converted part of the encapsulant is plated with an electrically conductive material.

Assignees

• Infineon Technologies Ag

Inventors

• Chan Sook Woon
• Chiang Chau Fatt
• Chua Kok Yau
• Goh Soon Lock
• Lee Swee Kah
• Mahler Joachim
• Ng Mei Chin
• See Beng Keh
• Tee Guan Choon Matthew Nelson

Classifications

• H10W42/284

  shielding resins · CPC title

• H10W42/276

  the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/07255

  changes in materials · CPC title