Substrate processing apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12123091-B2
Application number	US-202217954954-A
Country	US
Kind code	B2
Filing date	Sep 28, 2022
Priority date	Jan 21, 2015
Publication date	Oct 22, 2024
Grant date	Oct 22, 2024

Abstract

A technique for reducing cooling time for a substrate includes a substrate processing apparatus that may include: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism to supply the gas into an upper region of the transfer chamber. The substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism to supply the gas into a lower region of the transfer chamber. The heat-insulating unit is provided such that the gas flows downward through the lower region. The first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a process chamber in which a substrate supported by a substrate retainer and a heat insulator disposed under the substrate are accommodated and the substrate is processed;
a transfer chamber where the substrate is loaded into the substrate retainer;
a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism comprising: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is unloaded from the process chamber; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat insulator is unloaded;
a first exhaust unit disposed beside the substrate retainer unloaded such that the gas flows horizontally from the first gas supply mechanism to the first exhaust unit through the upper region; and
a second exhaust unit comprising an opening disposed on a bottom of the transfer chamber and under the heat insulator, wherethrough the gas is directly exhausted from the bottom of the transfer chamber to a duct such that the gas flows downward around the heat insulator unloaded,
wherein no opening is disposed beside the heat insulator unloaded to exhaust the gas.

2. The substrate processing apparatus of claim 1 , wherein the second exhaust unit further comprises a panel including the opening that configures the bottom of the transfer chamber.

3. The substrate processing apparatus of claim 1 , wherein the second exhaust unit further comprises a punched panel disposed under the heat insulator and vertically facing a bottom portion of the heat insulator.

4. The substrate processing apparatus of claim 1 , wherein the first gas supply mechanism comprises a first filter attached to a first supply port wherethrough the gas filtered by the first filter flows out of the first gas supply mechanism, the first filter extending in parallel with a first sidewall of the transfer chamber across an entire depth of the transfer chamber without any intervening structures, and
the second gas supply mechanism comprises a second filter attached to a second supply port wherethrough the gas filtered by the second filter flows out of the second gas supply mechanism, the second filter extending in parallel with the first sidewall of the transfer chamber across the entire depth of the transfer chamber without any intervening structures.

5. The substrate processing apparatus of claim 4 , wherein a height of the first filter is substantially same as that of the upper region, and
a height of the second filter is substantially same as that of the lower region.

6. The substrate processing apparatus of claim 1 , the second exhaust unit is configured to exhaust the gas hotter than the gas exhausted by the first exhaust unit.

7. The substrate processing apparatus of claim 1 , wherein the first exhaust unit comprises a plurality of vertically elongated openings disposed at positions corresponding to the upper region.

8. The substrate processing apparatus of claim 1 , wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed below the first gas supply mechanism.

9. The substrate processing apparatus of claim 8 , wherein the first exhaust unit is provided along a second sidewall of the transfer chamber opposite to the first sidewall and configured to exhaust the gas supplied to the upper region through the second sidewall.

10. The substrate processing apparatus of claim 9 , further comprising:
an elevator installed at the second sidewall and configured to load/unload the substrate retainer,
wherein the second sidewall is divided into back and forth by the elevator extending vertically.

Assignees

• Kokusai Electric Corp

Inventors

• Nakada Takayuki
• Nogami Takashi
• Taniyama Tomoshi
• Kamimura Daigi

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/33

  into and out of processing chamber · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• C23C16/45502

  Flow conditions in reaction chamber · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title