Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-10508336-B2
Application number	US-201715632678-A
Country	US
Kind code	B2
Filing date	Jun 26, 2017
Priority date	Jan 21, 2015
Publication date	Dec 17, 2019
Grant date	Dec 17, 2019

Abstract

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a substrate retainer configured to support a substrate;
a heat-insulating unit disposed under the substrate retainer;
a transfer chamber where the substrate is loaded into the substrate retainer;
a process chamber in which the substrate supported by the substrate retainer is accommodated and processed;
a seal cap configured to close a lower end of the process chamber;
an elevating mechanism configured to move the seal cap;
an arm connecting the seal cap to the elevating mechanism;
a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism comprising: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region; and
a boundary plate disposed at a boundary between the upper region and the lower region in the transfer chamber to divide the transfer chamber into the upper region and the lower region,
wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism,
wherein the boundary plate comprises an opening having a diameter greater than a diameter of the seal cap; a first cutaway portion wider than the arm to pass the arm therethrough; and a second cutaway portion wider than a substrate transfer device for transferring the substrate into the substrate retainer without colliding with the boundary plate.

2. The substrate processing apparatus of claim 1 , further comprising a first exhaust unit disposed on a second sidewall opposite to the first sidewall with the substrate retainer disposed therebetween, wherein the first exhaust unit is configured to exhaust the gas supplied by the first gas supply mechanism.

3. The substrate processing apparatus of claim 2 , further comprising a second exhaust unit disposed at a bottom of the transfer chamber, wherein the second exhaust unit is configured to exhaust the gas supplied by the second gas supply mechanism.

4. The substrate processing apparatus of claim 3 , wherein the second exhaust unit is disposed closer to the second sidewall provided with the first exhaust unit than the first sidewall provided with the first gas supply mechanism in the transfer chamber.

5. The substrate processing apparatus of claim 3 , wherein a horizontal cross-sectional area of the transfer chamber about the second exhaust unit is smaller than that of the transfer chamber about the lower region.

6. The substrate processing apparatus of claim 5 , wherein at least one of a lower portion of the first sidewall provided with the first gas supply mechanism and a lower portion of the second sidewall provided with the first exhaust unit comprises a slope inclined inward toward a vertical center line of the transfer chamber.

7. The substrate processing apparatus of claim 6 , wherein an upper end of the slope is lower than a lower end of the heat-insulating unit.

8. The substrate processing apparatus of claim 7 , wherein the slope at the lower portion of the first sidewall is less inclined than the slope at the lower portion of the second sidewall.

9. The substrate processing apparatus of claim 3 , further comprising:
a first circulation path configured to supply the gas exhausted from the upper region back into the upper region via the first gas supply mechanism; and
a second circulation path configured to supply the gas exhausted from the lower region back into the lower region via the second gas supply mechanism,
wherein the first circulation path and the second circulation path partially shares a confluent path having an upstream side where the first circulation path and the second circulation path converges and a downstream side where the confluent path is divided into the first circulation path and the second circulation path.

10. The substrate processing apparatus of claim 9 , further comprising a cooling unit provided in the confluent path and configured to cool the gas.

11. The substrate processing apparatus of claim 10 , wherein the first gas supply mechanism and the second gas supply mechanism comprise a first ventilation unit and a second ventilation unit configured to ventilate the gas, respectively, and provided at the downstream side of the confluent path adjacent to each other, the first ventilation unit having an output greater than an output of the second ventilation unit.

12. A substrate processing apparatus, comprising:
a substrate retainer configured to support a substrate;
a heat-insulating unit disposed under the substrate retainer;
a transfer chamber where the substrate is loaded into the substrate retainer;
a process chamber in which the substrate supported by the substrate retainer is accommodated and processed;
a shutter configured to close a lower end of the process chamber;
a receiving portion configured to accommodate the shutter when the substrate retainer is loaded into the process chamber, wherein the receiving portion is disposed at an upper end of one sidewall of the transfer chamber to protrude outward from the transfer chamber, the receiving portion having straight portions and a curved portion at an intersection of the straight portions;
a third exhaust unit configured to exhaust an inside of the receiving portion, wherein the third exhaust unit is disposed along the straight portions and the curved portion; and
a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism comprising: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region,
wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

13. The substrate processing apparatus of claim 12 , wherein the third exhaust unit is further configured to exhaust a corner of the transfer chamber.

Assignees

• Hitachi Int Electric Inc
• Kokusai Electric Corp

Inventors

• Nakada Takayuki
• Nogami Takashi
• Taniyama Tomoshi
• Kamimura Daigi

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/33

  into and out of processing chamber · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title