Method and apparatus for modulating film uniformity
US-2024183034-A1 · Jun 6, 2024 · US
Flow conditions in reaction chamber
Flow conditions in reaction chamber · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23C16/45502 |
| Official title | {Flow conditions in reaction chamber} |
| Display label | Flow conditions in reaction chamber |
| Total patents | 624 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 37 |
| 2016 | 42 |
| 2017 | 31 |
| 2018 | 42 |
| 2019 | 67 |
| 2020 | 62 |
| 2021 | 60 |
| 2022 | 84 |
| 2023 | 64 |
| 2024 | 63 |
| 2025 | 52 |
| 2026 | 20 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Injector for semiconductor epitaxy growth
US-2016362813-A1 · Dec 15, 2016 · US
High speed epi system and chamber concepts
US-2016348240-A1 · Dec 1, 2016 · US
Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US-9508547-B1 · Nov 29, 2016 · US
TiAlCN Layers With Lamellar Structure
US-2016333473-A1 · Nov 17, 2016 · US
Method for controlling a processing system
US-2016326643-A1 · Nov 10, 2016 · US
Process gas preheating systems and methods for double-sided multi-substrate batch processing
US-2016298263-A1 · Oct 13, 2016 · US
Semiconductor processing reactor and components thereof
US-2016289828-A1 · Oct 6, 2016 · US
Method of manufacturing semiconductor device
US-2016293500-A1 · Oct 6, 2016 · US
Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US-2016289832-A1 · Oct 6, 2016 · US
Semiconductor manufacturing apparatus and semiconductor manufacturing method
US-2016284533-A1 · Sep 29, 2016 · US
Chamber components for epitaxial growth apparatus
US-2016281261-A1 · Sep 29, 2016 · US
Method of Manufacturing Semiconductor Device
US-2016284539-A1 · Sep 29, 2016 · US
SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM
US-2016194753-A1 · Jul 7, 2016 · US
Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
US-9371579-B2 · Jun 21, 2016 · US
Sheet coating method
US-2016153087-A1 · Jun 2, 2016 · US
High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith
US-2016138191-A1 · May 19, 2016 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-2016097126-A1 · Apr 7, 2016 · US
Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
US-2016093542-A1 · Mar 31, 2016 · US
Method for producing aligned carbon nanotube assembly
US-2016075558-A1 · Mar 17, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23C16/45502?
- CPC C23C16/45502 is the Cooperative Patent Classification code for “Flow conditions in reaction chamber.”
- How many patents are filed under CPC C23C16/45502 (Flow conditions in reaction chamber)?
- Our database includes 624 publications tagged with this CPC code.
- Is patent activity under CPC C23C16/45502 growing?
- Publication counts under this code: 63 in 2024 vs 52 in 2025 (latest complete years).