Electrostatically clamped edge ring

Patent metadata

Field	Value
Publication number	US-11935776-B2
Application number	US-202117175315-A
Country	US
Kind code	B2
Filing date	Feb 12, 2021
Priority date	Nov 3, 2016
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

First claim

What is claimed is:

1. A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring to regulate the temperature; comprising:
providing a vacuum to the at least one ring backside temperature channel;
measuring pressure in the at least one ring backside temperature channel;
providing an electrostatic ring clamping voltage when the pressure in the at least one ring backside temperature channel reaches a threshold maximum pressure;
discontinuing the vacuum to the at least one ring backside temperature channel;
measuring pressure in the at least one ring backside temperature channel;
if pressure in the at least one ring backside temperature channel rises faster than a threshold rate, indicating sealing failure; and
if pressure in the at least one ring backside temperature channel does not rise faster than the threshold rate, providing a plasma process, using the at least one ring backside temperature channel to regulate a temperature of the edge ring.

2. The method, as recited in claim 1 , wherein during the providing a vacuum to the at least one ring backside temperature channel, the plasma processing chamber is at atmospheric pressure.

3. The method, as recited in claim 1 , further comprising reseating the edge ring if a sealing failure is indicated.

4. The method, as recited in claim 1 , wherein the providing the plasma process, comprises:
plasma processing a substrate in the plasma processing chamber, while maintaining the electrostatic ring clamping voltage; and
providing temperature control of the edge ring through the backside temperature channel, while plasma processing the substrate.

5. The method, as recited in claim 4 , wherein the providing the plasma process, further comprises:
placing the substrate in the plasma processing chamber;
providing a vacuum in the plasma processing chamber.

6. The method, as recited in claim 1 , further comprising placing the edge ring on the electrostatic ring clamp before providing the vacuum to the at least one ring backside temperature channel.

7. The method, as recited in claim 6 , wherein the placing the edge ring on the electrostatic ring clamp causes the edge ring to be spaced 10 microns to 50 microns away from the electrostatic ring clamp before providing the vacuum to the at least one ring backside temperature channel.

8. The method, as recited in claim 7 , wherein the providing the vacuum to the at least one ring backside temperature channel causes the edge ring to be spaced less than 20 microns away from the electrostatic ring clamp.

Assignees

• Lam Res Corp

Inventors

• Kimball Christopher
• Gaff Keith
• Wang Feng

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0602

  Temperature monitoring · CPC title