Substrate processing apparatus and apparatus cleaning method

Patent metadata

Field	Value
Publication number	US-11745213-B2
Application number	US-202017068964-A
Country	US
Kind code	B2
Filing date	Oct 13, 2020
Priority date	Oct 17, 2019
Publication date	Sep 5, 2023
Grant date	Sep 5, 2023

Abstract

A substrate processing apparatus includes a processing tub, a liquid recovery unit, a liquid recovery unit drain line, a storage, a first and a second liquid supply lines, a discharge line, a first and a second liquid flow rate controllers. The liquid recovery unit receives a processing liquid overflown from the processing tub. The liquid recovery unit drain line drains the processing liquid from the liquid recovery unit. The first and the second liquid supply lines supply a first and a second liquids, respectively. The cleaning liquid contains the first liquid and the second liquid, and removes a precipitate from the processing liquid. The discharge line discharges the cleaning liquid, the first liquid or the second liquid toward the liquid recovery unit. The first and the second liquid flow rate controllers are provided at the first and the second liquid supply lines, and adjust flow rates thereof, respectively.

First claim

We claim:

1. A substrate processing apparatus, comprising:
a processing tub allowed to accommodate therein multiple substrates, and configured to store therein a processing liquid;
a liquid recovery unit configured to receive the processing liquid overflown from the processing tub;
a liquid recovery unit drain line configured to drain the processing liquid from the liquid recovery unit;
a storage connected to the liquid recovery unit via the liquid recovery unit drain line, and configured to store therein the processing liquid drained from the liquid recovery unit;
a first liquid supply line configured to supply a first liquid of a cleaning liquid configured to remove a precipitate from the processing liquid, the cleaning liquid containing the first liquid and a second liquid;
a second liquid supply line configured to supply the second liquid;
a discharge line connected to the first liquid supply line and the second liquid supply line, and configured to discharge the cleaning liquid, the first liquid or the second liquid toward the liquid recovery unit;
a first liquid flow rate controller provided at the first liquid supply line, and configured to adjust a flow rate of the first liquid flowing in the first liquid supply line; and
a second liquid flow rate controller provided at the second liquid supply line, and configured to adjust a flow rate of the second liquid flowing in the second liquid supply line,
wherein the liquid recovery unit comprises:
a first liquid recovery unit disposed under the processing tub; and
a second liquid recovery unit,
wherein the processing tub and the first liquid recovery unit are disposed within the second liquid recovery unit.

2. The substrate processing apparatus of claim 1 ,
wherein the first liquid is pure water,
the second liquid is hydrogen fluoride, and
the processing liquid contains phosphoric acid and a dissolved silicon-containing compound.

3. The substrate processing apparatus of claim 2 , further comprising:
a controller configured to control the first liquid flow rate controller and the second liquid flow rate controller,
wherein the controller adjusts a concentration of the cleaning liquid by controlling the first liquid flow rate controller and the second liquid flow rate controller.

4. The substrate processing apparatus of claim 3 ,
wherein the liquid recovery unit drain line comprises:
a first drain line connected to the first liquid recovery unit, and configured to drain the processing liquid from the first liquid recovery unit; and
a second drain line connected to the second liquid recovery unit, and configured to drain the processing liquid from the second liquid recovery unit, and
wherein the first liquid recovery unit has a bottom surface inclined downwards toward the first drain line.

5. The substrate processing apparatus of claim 2 ,
wherein the liquid recovery unit drain line comprises:
a first drain line connected to the first liquid recovery unit, and configured to drain the processing liquid from the first liquid recovery unit; and
a second drain line connected to the second liquid recovery unit, and configured to drain the processing liquid from the second liquid recovery unit, and
wherein the first liquid recovery unit has a bottom surface inclined downwards toward the first drain line.

6. The substrate processing apparatus of claim 5 ,
wherein the discharge line is equipped with a discharge unit having multiple discharge openings arranged in a width direction of the bottom surface.

7. The substrate processing apparatus of claim 5 ,
wherein the discharge line is equipped with a discharge unit having multiple discharge openings arranged in an inclination direction of the bottom surface.

8. The substrate processing apparatus of claim 1 , further comprising:
a controller configured to control the first liquid flow rate controller and the second liquid flow rate controller,
wherein the controller adjusts a concentration of the cleaning liquid by controlling the first liquid flow rate controller and the second liquid flow rate controller.

9. The substrate processing apparatus of claim 8 ,
wherein the liquid recovery unit drain line comprises:
a first drain line connected to the first liquid recovery unit, and configured to drain the processing liquid from the first liquid recovery unit; and
a second drain line connected to the second liquid recovery unit, and configured to drain the processing liquid from the second liquid recovery unit, and
wherein the first liquid recovery unit has a bottom surface inclined downwards toward the first drain line.

10. The substrate processing apparatus of claim 1 ,
wherein the liquid recovery unit drain line comprises:
a first drain line connected to the first liquid recovery unit, and configured to drain the processing liquid from the first liquid recovery unit; and
a second drain line connected to the second liquid recovery unit, and configured to drain the processing liquid from the second liquid recovery unit, and
wherein the first liquid recovery unit has a bottom surface inclined downwards toward the first drain line.

11. The substrate processing apparatus of claim 10 ,
wherein the discharge line is equipped with a discharge unit having multiple discharge openings arranged in a width direction of the bottom surface.

12. The substrate processing apparatus of claim 10 ,
wherein the discharge line is equipped with a discharge unit having multiple discharge openings arranged in an inclination direction of the bottom surface.

13. An apparatus cleaning method of cleaning a substrate processing apparatus as claimed in claim 1 , the apparatus cleaning method comprising:
supplying the cleaning liquid, the first liquid or the second liquid to the liquid recovery unit from the discharge line; and
adjusting the flow rates of the first liquid and the second liquid by using the first liquid flow rate controller and the second liquid flow rate controller.

14. The apparatus cleaning method of claim 13 ,
wherein the first liquid is pure water,
the second liquid is hydrogen fluoride, and
in the supplying of the cleaning liquid, the first liquid or the second liquid, the cleaning liquid adjusted to a first concentration through the adjusting of the flow rates of the first liquid and the second liquid is first supplied to the liquid recovery unit, and, then, the cleaning liquid adjusted to a second concentration lower than the first concentration through the adjusting of the flow rates of the first liquid and the second liquid is supplied to the liquid recovery unit.

15. The apparatus cleaning method of claim 14 ,
wherein in the supplying of the cleaning liquid, the first liquid or the second liquid, the cleaning liquid is supplied to the liquid recovery unit intermittently.

16. The apparatus cleaning method of claim 13 ,
wherein in the supplying of the cleaning liquid, the first liquid or the second liquid, the cleaning liquid is supplied to the liquid recovery unit intermittently.

17. The apparatus cleaning method of claim 13 ,
wherein in the supplying of the cleaning liquid, the first liquid or the second liquid, supplying the first liquid supplied from the first liquid supply line to the liquid recovery unit and supplying the second liquid supplied from the second liquid supply line to the liquid recovery unit are repeated.

Assignees

• Tokyo Electron Ltd

Inventors

• Aratake Hidemasa
• Kuroda Osamu
• Kanagawa Kouzou

Classifications

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P72/0416

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title