Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2019131120-A1
Application number	US-201815906933-A
Country	US
Kind code	A1
Filing date	Feb 27, 2018
Priority date	Oct 31, 2017
Publication date	May 2, 2019
Grant date	—

Abstract

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

First claim

What is claimed is:

1 . A semiconductor manufacturing apparatus, comprising:
a container in which a processing chamber is provided; a stage provided inside the processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied as the catalytic gas.

2 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the metal element included in the high-k insulating film is a metal element classified in a fifth period in a periodic table and succeeding periods, and the high-k insulating film includes silicate of the metal element.

3 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the metal element included in the high-k insulating film is a rare earth element, and the high-k insulating film includes silicate of the rare earth element.

4 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the first system includes a first vaporizer, the second system includes a second vaporizer, the first vaporizer vaporizes a mixed chemical liquid of a chemical stock liquid for the complex forming gas and a chemical stock liquid for the complex stabilizing material gas under a predetermined temperature and pressure condition, and the second vaporizer vaporizes a chemical stock liquid using the second organometallic complex as a raw material under the predetermined temperature and pressure condition.

5 . A method for manufacturing a semiconductor device, comprising:
mounting a semiconductor substrate, in which a mask layer having a predetermined pattern shape is formed on a high-k insulating film including silicate, in a processing chamber; desorbing gas or foreign matter adsorbed on a surface of the semiconductor substrate; supplying catalytic gas under decompression and heating; cooling the semiconductor substrate after a supply of the catalytic gas is stopped and supplying reactive gas to the processing chamber in a state in which a temperature of the semiconductor substrate falls below a predetermined temperature; decompressing and heating an inside of the processing chamber by stopping the supply of the reactive gas; and exhausting a first organometallic complex from the processing chamber by vaporizing the first organometallic complex generated by reacting with a metal element included in the high-k insulating film.

6 . The method for manufacturing a semiconductor device according to claim 5 , wherein
the catalytic gas is catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material, and the reactive gas is mixed gas which includes complex forming gas reacting with the metal element included in the high-k insulating film to form the first organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex.

7 . The method for manufacturing a semiconductor device according to claim 5 , wherein
the metal element included in the high-k insulating film is a metal element classified in a fifth period in a periodic table and succeeding periods, and the high-k insulating film includes silicate of the metal element.

8 . The method for manufacturing a semiconductor device according to claim 5 , wherein
the metal element included in the high-k insulating film is a rare earth element, and the high-k insulating film includes silicate of the rare earth element.

9 . The method for manufacturing a semiconductor device according to claim 6 , wherein
a raw material for the complex forming gas is an organic compound obtained by forming a coordinate bond of at least two or more coordination bond to a transition metal atom, a so-called multidentate ligand molecule.

10 . The method for manufacturing a semiconductor device according to claim 9 , wherein
the raw material for the complex forming gas is diketones including a fluorine atom.

11 . The method for manufacturing a semiconductor device according to claim 6 , wherein
a raw material for the complex stabilizing material gas is an organic compound having two or more elements having an unshared electron pair of an oxygen atom or a nitrogen atom in a molecular skeleton and 5 or more atoms except a hydrogen atom and a fluorine atom.

12 . The method for manufacturing a semiconductor device according to claim 11 , wherein
the raw material for the complex stabilizing material gas is ethers.

13 . The method for manufacturing a semiconductor device according to claim 6 , wherein
the second organometallic complex is an organometallic complex including an iron group element.

14 . The method for manufacturing a semiconductor device according to claim 13 , wherein
the second organometallic complex is an organometallic complex including cobalt.

15 . The method for manufacturing a semiconductor device according to claim 13 , wherein
the second organometallic complex is an organometallic complex not including a fluorine atom.

Assignees

• Hitachi High Tech Corp

Inventors

• Yamaguchi Yoshihide

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title