Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US10731256B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10731256-B2 |
| Application number | US-201715479429-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 5, 2017 |
| Priority date | Apr 7, 2016 |
| Publication date | Aug 4, 2020 |
| Grant date | Aug 4, 2020 |
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Official abstract text for this publication.
A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M 1 to the substrate W; and a solvent supply unit 55 a configured to supply a solvent N 1 having a different temperature from a temperature of the plating liquid M 1 to the substrate W. The solvent N 1 is supplied to a preset position on the substrate W from the solvent supply unit 55 a after the plating liquid M 1 is supplied to the substrate W from the plating liquid supply unit 53.
Opening claim text (preview).
We claim: 1. A plating apparatus, comprising: a substrate holder configured to hold a substrate horizontally; a driving unit configured to rotate the substrate held by the substrate holder; a plating liquid nozzle configured to supply a plating liquid to a top surface of the substrate; a solvent nozzle configured to supply a solvent constituting the plating liquid to the surface of the substrate to which the plating liquid is being supplied or has been supplied; a first heater coupled to the plating liquid nozzle to heat the plating liquid to a first temperature before supplying the plating liquid to the substrate from the plating liquid nozzle; and a second heater coupled to the solvent nozzle to heat the solvent to a second temperature before supplying the solvent to the substrate from the solvent nozzle wherein the second temperature by the second heater is higher than the first temperature by the first heater, the plating liquid nozzle and the solvent nozzle are configured to be moved together above the substrate as one body, and the plating liquid nozzle and the solvent nozzle are inclined in different directions when viewed from a side surface of the substrate. 2. The plating apparatus of claim 1 , wherein the solvent nozzle is disposed to surround the plating liquid nozzle. 3. The plating apparatus of claim 1 , wherein at least one of the plating liquid nozzle and the solvent nozzle is provided in two or more. 4. The plating apparatus of claim 1 , further comprising: a controller configured to control the plating liquid nozzle and the solvent nozzle, wherein the controller is further configured to execute: supplying the plating liquid to the substrate from the plating liquid nozzle; and supplying the solvent having a temperature different from a temperature of the plating liquid to a preset position on the substrate from the solvent nozzle. 5. The plating apparatus of claim 4 , wherein the controller is further configured to control the plating liquid nozzle and the solvent nozzle such that the plating liquid and the solvent are simultaneously supplied for at least a preset time period in the supplying of the solvent. 6. The plating apparatus of claim 4 , wherein the controller is further configured to sequentially execute the supplying of the plating liquid and the supplying of the solvent.
by plating, e.g. electroless plating or electroplating · CPC title
Process conditions · CPC title
Heating of the substrate · CPC title
Apparatus for electroless plating · CPC title
Temperature monitoring · CPC title
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